Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
56 (1990), S. 1661-1663
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Electrical characterization of the SiNx/InGaAs and SiNx/Si interfaces was carried out by high-frequency capacitance-voltage (C-V) measurements (1 MHz). Two impurity levels, regardless of substrate nature, have been identified and attributed to silicon dangling bond defects, such as 3/4 Si0 and 3/4 Si−. Electron spin resonance measurements, carried out both at room temperature and at 77 K, confirmed the presence of defects such as 3/4 Si0 surrounded by Si bonds.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.103109
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