ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The silicon atom densities in both silane/oxygen and tetraethoxysilane (TEOS)/oxygen electron cyclotron resonance (ECR) plasmas were measured as functions of microwave power, pressure, and gas flow rates. An atomic absorption spectrometer with a Si hollow-cathode lamp was constructed for these measurements. Silicon atom densities in silane/oxygen ECR discharges increase with rising plasma density, and a strong correlation was found between the Si atom gas-phase abundance and the silicon oxide film deposition rate. The measured Si concentrations [(1–7)×1010 cm−3] were high enough to account for a significant part of the film growth in the silane based chemistry. In TEOS/O2 discharges Si atom concentrations were lower by an order of magnitude, so Si is probably not a major contributor to the growth rate in that case. The internal temperature of Si atoms was found to vary from 380 to 720 K with increasing microwave power (200–650 W). © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.369424
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