ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The effect of ohmic contact location on the buffer leakage current of AlGaN/GaNheterostructure was investigated and the AlGaN/GaN HEMT employing the proposed ohmiccontact pattern was fabricated. We have fabricated 3 different types of ohmic patterns; type A - bothcontacts are on the etched GaN buffer layer, type B - one is on the etched GaN buffer layer and theother is on the unetched GaN cap layer and type C - both contacts are on the unetched GaN caplayer. Our experimental results showed that the ohmic contact on GaN buffer increased the bufferleakage current due to the lateral diffusion of ohmic metals. The proposed AlGaN/GaN HEMTsuccessfully decreased the leakage current and did not affect the forward drain current and thetransconductance
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.1337.pdf
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