ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • Articles  (209)
Collection
  • Articles  (209)
Source
Keywords
Publisher
Years
Journal
Topic
  • 11
    Electronic Resource
    Electronic Resource
    Visible luminescences from thermally grown silicon dioxide thin films (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3402-3404 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We introduce visible photoluminescences (PL) of violet (432 nm) and yellow (561 nm) at room temperature from thermally treated silicon dioxide thin films. These luminescences were very strong with a near infinite degradation time. At an oxide layer thickness less than 200 nm, these luminescences were not seen, even with high temperature annealing at about 1000 °C. As a result of photoluminescence, x-ray photoelectron spectroscopy, Fourier transform infrared, and high-resolution transmission electron microscopy measurements, we conclude that the violet PL originates from the nanocrystalline silicon formed in the silicon oxide film by the thermal strain effect between the silicon substrate and the silicon dioxide film, while the yellow PL originates from the radiative decay of self-trapped excitons that are confined to oxygen sufficient structures. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117273
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 12
    Electronic Resource
    Electronic Resource
    Deep levels in GaAs grown on Si during rapid thermal annealing (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 761-763 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep levels in GaAs on Si substrates grown by metalorganic chemical vapor deposition (MOCVD) were studied during infrared rapid thermal annealing. For GaAs layers on Si after annealing at 850 °C for 20 s, three electron deep levels at 0.36, 0.27, and 0.20 eV below the conduction band were created as the dominant deep levels. Especially, the 0.36 eV level was found to increase up to 40% of the donor concentration as the thickness of Si substrates increased. These results indicate that rapid thermal annealing of GaAs on Si may induce high-density deep levels due to a biaxial tensile stress caused by the difference in thermal expansion coefficients.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102705
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 13
    Electronic Resource
    Electronic Resource
    Effect of atomic bond structure on crystallographic orientation dependence of carbon doping in GaAs (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 2519-2523 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of atomic bond structure at the deposition surface on the crystallographic orientation dependence of carbon doping in GaAs was studied. Carbon doping into GaAs epilayers was performed by atmospheric pressure metalorganic chemical vapor deposition using extrinsic carbon sources of carbon tetrachloride (CCl4) and carbon tetrabromide (CBr4). Epitaxial growths were done on the exact (100) and four different misoriented GaAs substrates with orientations of (511)A, (311)A, (211)A, and (111)A. The electrical properties were measured by van der Pauw Hall analysis at room temperature. Electrically active concentrations in excess of 1×1019 cm−3 were obtained so that 4 and CBrCCl4 were demonstrated as efficient p-type dopant sources for carbon doping into GaAs. The dependence of hole concentration on the offset angle of CCl4-doped and CBr4-doped GaAs shows the same tendency, whereas the trend of carbon doping from intrinsic carbon doping technique is different from our results. In particular, the hole concentration on the (100) surface is higher than that on the (111)A surface in the cases of CCl4 and CBr4. The result is opposite to that of the intrinsic doping case. A model based on the atomic bond structure of an adsorption site of carbon-containing species is proposed to explain the difference. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367013
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 14
    Electronic Resource
    Electronic Resource
    Creation of deep levels in horizontal Bridgman-grown GaAs by hydrogenation (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 856-858 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of hydrogen plasma exposure on the deep levels in GaAs grown by the horizontal Bridgman method was studied. After hydrogenation at 250 °C for 3 h, the concentrations of the electron deep levels, such as the EL2 trap (Ec-0.81 eV), the EL3 trap (Ec−0.63 eV), and the EL6 trap (Ec−0.35 eV), decrease by one order of magnitude. On the other hand, three new electron traps at Ec −0.42 eV, Ec −0.54 eV, and Ec −0.94 eV are created. After rapid thermal annealing up to 550 °C for 10 s, these created traps are reduced and the deep levels decreased by hydrogenation recover nearly completely. This result reveals that the passivation and creation of deep levels by hydrogenation may be explained as the interaction of atomic hydrogen with an unsaturated bond of native defects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100094
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 15
    Electronic Resource
    Electronic Resource
    Dependence of carbon incorporation on crystallographic orientation of GaAs and AlGaAs grown by metalorganic chemical vapor deposition using CBr4 (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 1205-1207 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical properties of CBr4-doped GaAs and Al0.3Ga0.7As epilayers grown on GaAs substrates with various surface crystallographic orientations from (100) toward (111)A were investigated. Carbon incorporation into GaAs and AlGaAs epilayers was performed by atmospheric pressure metalorganic chemical vapor deposition using CBr4. The electrical properties of the epilayers showed a strong crystallographic orientation dependence. With an increase of the surface offset angle, the hole concentration of CBr4-doped GaAs and AlGaAs epilayers rapidly decreased showing a hump at (311)A. The trend of the hole concentration dependence on the offset angle was not changed with growth temperatures in the range of 550–650 °C. Carbon incorporation is much higher in AlGaAs than in GaAs. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366264
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 16
    Electronic Resource
    Electronic Resource
    Abnormal behavior of midgap electron trap in HB-GaAs during thermal annealing (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 4422-4425 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The behavior of the EL2 family in horizontal Bridgman-(HB) grown GaAs by two thermal annealing methods, furnace annealing and rapid thermal annealing, was studied through deep level transient spectroscopy (DLTS) measurements, and a similar behavior of another group of electron traps was observed. As the annealing time is increased, the EL2 trap (Ec-0.81 eV) is transformed to the new trap, EX2 (Ec-0.73 eV), and finally to the other new trap, EX1 (Ec-0.86 eV). Also the EL6 group (Ec-0.18, 0.22, 0.27, and 0.35 eV) varied similarly to the EL2 family as a trap (Ec-0.27 eV) is transformed to the first trap (Ec-0.18 eV) and then the second trap (Ec-0.22 eV). This result revealed that the EL2 family is related to the EL6 group. From the study of photocapacitance quenching, the existence of metastable states of the EL2 family is identified. These results suggest that the atomic structure of the EL2 trap may be an arsenic antisite with an interstitial arsenic and a double vacancy, such as VAsAsIVGaAsGa or its complex.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340187
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 17
    Electronic Resource
    Electronic Resource
    In situ pattern deposition of In2O3 and in situ pattern etching of GaAs (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1635-1637 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The selective deposition of In2O3 was studied on GaAs substrates having a carbon pattern prepared by electron beam (EB) irradiation, in order to fabricate an In2O3 mask for in situ processing. The carbon pattern less than 5 nm thick was formed on GaAs by the scanning irradiation of EB in trimethylindium (TMIn) ambient, and the subsequent deposition of In2O3 was carried out in situ with a simultaneous supply of TMIn and H2O2. By this two-step processing, the carbon pattern is transferred to an In2O3 film below 550 °C, which can be used as a mask for in situ selective epitaxy of semiconductors. We also found for the first time that the selective etching of GaAs takes place under H2O2 at temperatures above 600 °C. The mechanism of the etching process involves the oxidation of GaAs by H2O2 and the simultaneous desorption of GaAs oxide. The selectivity in the In2O3 deposition and the GaAs etching is derived from the suppression of TMIn decomposition or GaAs oxidation on the carbon pattern. Considering that the deep submicron carbon pattern can be formed by focused EB irradiation, the pattern transferring technique presented here is advantageous for in situ processing of nanostructures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113045
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 18
    Electronic Resource
    Electronic Resource
    Selective formation of one- and two-dimensional arrayed InGaAs quantum dots using Ga2O3 thin film as a mask material (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2479-2481 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the selective formation of InGaAs quantum dots (QDs) by molecular beam epitaxy. Nanoscale patterned Ga2O3 thin film deposited on the GaAs (100) substrate was employed as a mask material. Due to the enhanced migration effect of the group-III adatoms, such as Ga and In on Ga2O3 mask layer, the InGaAs QDs formed on the patterned substrate results in coalesced islands unlike those formed on the nonpatterned substrate. The estimation of the relative volume of the islands per unit area revealed that the desorption process as well as the migration of the Ga and In adatoms might occur on the Ga2O3 layer during the growth process, providing a good selective growth of self-assembled QDs. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122488
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 19
    Electronic Resource
    Electronic Resource
    Direct formation of nanocrystalline silicon by electron cyclotron resonance chemical vapor deposition (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 3014-3016 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have confirmed the direct formation of nanosized crystalline silicon during the deposition of amorphous silicon layers by electron cyclotron resonance chemical vapor deposition (ECRCVD) on silicon and silicon–dioxide substrates. Two photoluminescence (PL) peaks at 680 and 838 nm were observed at room temperature from the samples. From cross-sectional high-resolution transmission electron microscopy (HRTEM) measurements, it was confirmed that nanosize silicon crystallites of 3–5 nm in diameter were randomly distributed throughout the amorphous silicon layer. Theoretical calculations using quantum size effects gave an average crystalline size of 4 nm which was consistent with the PL peak energy at 680 nm obtained from the sample. Also, the size of the crystallites could be controlled by the change of the substrate temperature during the deposition process. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118734
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 20
    Electronic Resource
    Electronic Resource
    Control of GaAs lateral growth rate by CBr4 during metalorganic chemical vapor deposition on patterned substrates (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 815-817 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lateral growth rate of GaAs is remarkably increased with supplying CBr4, which has been utilized as a p-type dopant source for carbon doped GaAs epilayers during metalorganic chemical vapor deposition growth. The lateral growth rate can be represented as a linear function of the CBr4 flow rate, while the GaAs vertical growth rate is relatively insensitive to the CBr4 flow rate. The maximum ratio of the lateral to vertical growth rate by CBr4 is about 29. With increasing the growth temperature, the lateral growth rate increases, but it decreases at a more elevated growth temperature than 700 °C. These results are also compared to the previous results obtained by CCl4. In all cases the lateral growth rate increments by CBr4 are larger than those by CCl4. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117901
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...