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  • Articles  (4)
  • Electrical Engineering, Measurement and Control Technology  (4)
  • 1
    Electronic Resource
    Electronic Resource
    The energy spectrum of lead selenide implanted with oxygen (1999)
    Springer
    Semiconductors 33 (1999), S. 1072-1075 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Single-crystal and hot-pressed samples of PbSe: O+ were used to investigate the thermoelectric power and optical reflection spectrum and absorption of this material at 300 K. A quasilocal level associated with oxygen was identified in the valence band of PbSe: O+.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187867
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  • 2
    Electronic Resource
    Electronic Resource
    Energy spectrum of oxygen-implanted lead telluride deduced from optical absorption data (1997)
    Springer
    Semiconductors 31 (1997), S. 1225-1227 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The thermoelectric power and optical absorption spectra of single-crystal PbTe, implanted with oxygen and vacuum annealed, have been investigated. A quasilocal level, which could be associated with oxygen, was found in the PbTe:O+ valence band.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187298
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  • 3
    Electronic Resource
    Electronic Resource
    Characteristic features of the defect formation process in Pb1−x SnxSe(x⩽0.06) (1998)
    Springer
    Semiconductors 32 (1998), S. 397-400 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The spectral dependences of the absorption coefficient in undoped p-Pb1−x SnxSe(x=0.00–0.06) at T=300 K were investigated. A quasilocal level associated with a chalcogen vacancy was found in all experimental samples. It is shown that the chalcogen vacancy density in samples with tin is appreciably different from that in samples without tin, and it increases with x. The nature of this phenomenon is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187402
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  • 4
    Electronic Resource
    Electronic Resource
    Optical reflection in Pb0.78Sn0.22Te doped to 3 at. % with indium (1998)
    Springer
    Semiconductors 32 (1998), S. 937-938 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The spectral dependence of the optical reflection of n-(Pb0.78Sn0.22)1−x InxTe (x=0.02 and 0.03) and p-Pb0.78Sn0.22Te doped with 3 at. % In and 1.5 at. % Tl has been investigated at T=300 K. Minima associated with plasma vibrations of the free carriers were observed in all the experimental spectra. The electron density n and the hole density p were estimated by the Kukharskii-Subashiev method. It is shown that the value of n so obtained is much smaller than its value obtained from the Hall effect only in n-(Pb0.78Sn0.22)0.97In0.03Te in which, as had been assumed previously, hopping conductivity dominates. This result may be viewed as an independent experimental confirmation of the unusual character of conduction in n-(Pb0.78Sn0.22)1−x InxTe solid solutions with high indium content.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187517
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