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  • Articles  (1,025)
  • Physics  (1,025)
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  • Articles  (1,025)
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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7375-7375 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4518-4520 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By doping a very small amount of 57Fe into La2CuO4, Mössbauer spectroscopy has been applied to study the magnetic property of the parent compound. From the measurement of the magnetic hyperfine field at the Fe nuclei for various temperatures between 4.2 K and TN, the temperature dependence of the sublattice magnetization for La2CuO4 has been discussed. A theoretical calculation shows that, with temperature increasing a 3D-2D dimensional crossover occurs in the magnetic dynamics of an anisotropic antiferromagnetic, which is indeed confirmed by the data. The best fit to the data using this theory yields J=1600 K and r=0.011.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 4682-4684 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the switching properties of micron-scale magnetic tunnel junctions in two-dimensional magnetic fields. We present data on interlayer magnetic coupling for multiple samples. We interpret these data as the sum of a magnetostatic and a Néel coupling contribution. The data are presented as functions of layer structure. In addition, we have extracted information about interface roughness. We have also studied the area of switching critical curves as a function of device geometry. © 2000 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 5270-5272 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied bias and magnetic field dependence of voltage noise in metallic magnetic tunnel junctions with areal dimensions on the order of 1 μm. We generally observe noise with Gaussian amplitude distribution and pure 1/f power spectra at low frequencies. The 1/f noise scales with bias voltage as V2. Two kinds of deviations from this low frequency behavior have been observed. One is at fixed magnetic field when the junction bias reaches above a critical value, the other occurs at a fixed bias when the external magnetic field brings the sample to certain magnetic configurations. In both cases the noise spectra become dominated by Lorentzian noise and in both cases we have observed two level fluctuators in the time domain. We attribute the bias dependent noise to charge traps in the tunnel barrier. The field dependent noise is associated with the switching of the magnetization direction of portions of the top electrode, which we believe to be reversible. © 1999 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 86 (2003), S. 0 
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Structures and energetics of various, plausible realizations of the Al2O3(0001)/Cu(111) interface have been studied by density-functional theory. The oxygen-terminated interface is found to be relatively strong with a work of separation (Wsep) of 7.03 J/m2. For hydrogen-rich (e.g., moist) conditions, we have determined that the interface accommodates about 1/3 of a monolayer of hydrogen. This lowers Wsep to 4.72 J/m2, which is, however, greater than the corresponding value for bulk copper, which implies that fracture in such a system occurs in the copper region, consistent with fracture toughness experiments. We also have studied the initial stages of copper and aluminum growth on the hydrogen-stabilized oxygen-terminated Al2O3(0001) surface. Although a monolayer of aluminum already completely dissociates the interfacial O-H group, a monolayer of copper leaves it intact. If, for a thick copper film, such a full hydrogen layer were maintained, the resulting metastable interface would be very weak, with Wsep= 0.63 J/m2.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 5509-5511 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the observation of a large magnetoresistance (83%) at low magnetic fields of tens of Oe at 4.2 K in the epitaxial trilayer junction structure, La0.67Sr0.33MnO3/SrTiO3/La0.67Sr0.33MnO3. The spin-polarization parameter of the manganite has been determined from the magnetoresistance value. The switching fields of the two magnetic layers were designed by using the magnetic shape anisotropy. By limiting the sweeping field in a low field range (∼100 Oe), we have achieved bistable resistive states at zero field, which is of potential interest for magnetoelectronic applications. © 1997 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 513-517 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The plasma produced during pulsed laser deposition of manganate films has been probed using optical emission spectroscopy. The studies have been carried out using Mn, Mn2O3, and La0.67Sr0.33MnO3 (LSMO) as target materials in the presence of two different oxidizing gases: nitrous oxide (N2O) and oxygen (O2). Emission from excited MnO (MnO*) has been observed in all cases resulting primarily from reaction of the ablated Mn atoms with the background gas. Consistent with the oxidation reaction energetics, the emission intensity from MnO* is found to be about an order of magnitude stronger with N2O than with O2. Magnetization measurements of LSMO films show improved magnetic properties of films prepared in N2O compared to O2 at low pressures. The improvement in film quality can be attributed, at least in part, to the increased oxidation of Mn in the plasma plume. © 1996 American Institute of Physics.
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  • 8
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have explored the colossal magnetoresistance (CMR) effect in the antiferromagnetic La0.5Ca0.5MnO3 compound. In the absence of a magnetic field (H), the solid is a canted antiferromagnetic (AFM) insulator. An applied H in the Tesla scale induces a first order AFM to FM phase transition, and correspondingly, an insulator to metal transition. The observed CMR is attributed to the H-induced charge localization-delocalization behavior associated with the AFM–FM transition. At low temperatures (T〈100 K), the solid remains in the AFM phase, where we have observed a phenomenal one millionfold change in resistivity between 0 and 8 Tesla. The origin of CMR in low T-region is a thermal activation energy gap which is strongly dependent on H. © 1996 American Institute of Physics.
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  • 9
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated epitaxial La0.67Ca0.33MnO3−δ thin films using pulsed laser deposition and performed subsequent thermal treatments. Magnetoresistance values as large as 14 000% (Δρ/ρH) were obtained. Above magnetic ordering temperatures, we observed a thermally activated conductivity that also has a quadratic magnetic field dependence. At low temperatures, we found a large hysteresis in the magnetoresistance that correlates with an unusual magnetic hysteresis curve. We interpret the hysteretic behavior as the result of a "frozen-in'' canted spin structure. Our results suggest that the electron conduction in this material is most sensitive to the canting angle of the neighboring Mn spins. © 1996 American Institute of Physics.
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  • 10
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial thin films of La1−x(D'Alembertian)xMnO3−δ(0≤x≤0.33) where (D'Alembertian) is a vacancy have been grown on (100) SrTiO3 substrates by pulsed laser deposition. The lanthanum deficiency results in self doping of the system without the need for divalent ion substitution. Both the films and the bulk targets used for deposition were ferromagnetic and showed giant magnetoresistance (GMR). The films increased in saturation magnetization Ms and Curie temperature Tc with increasing x. The Tc, however, was about the same as found in Cax substitutions. Bulk samples showed little change in Ms and Tc with vacancy concentration. Ms in bulk samples is about half the value found in the films which have theoretical saturations for x≥0.2. GMR in the films is a few hundred percent but the bulk values are 25% at H=1.8 T. © 1996 American Institute of Physics.
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