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  • Articles  (1,147)
  • Physics  (1,054)
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  • Articles  (1,147)
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  • 11
    Electronic Resource
    Electronic Resource
    Observation of Lomer–Cottrell locks in SiGe strained layers (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2220-2221 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Misfit dislocations in the SiGe system are usually not dissociated. We present the first observation of a Lomer–Cottrell lock array in a Si/Si1−xGex/Si heterostructure (0.4〈x〈0.6). We describe the character of the stacking faults and the partial dislocations which form the locks.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103896
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  • 12
    Electronic Resource
    Electronic Resource
    Anisotropic interfacial strain in InP/InGaAs/InP quantum wells studied using degree of polarization of photoluminescence (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 3616-3620 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room-temperature, polarization-resolved photoluminescence from a (001) surface has been used to investigate InP/InGaAs/InP quantum wells grown by gas source molecular beam epitaxy. The degree of polarization of photoluminescence from a (001) surface, DOP001, is a direct measure of the anisotropy of polarization of luminescence between [110] and [11¯ 0] directions. DOP001 is observed to be strongly dependent on the quantum well thickness, composition (strain), and the gas switching time at the growth-interrupted interface. Results show that the anisotropy of polarization may be due to an effect of an anisotropic strain field that is associated with strained bonds at the interfaces of the quantum well. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365479
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  • 13
    Electronic Resource
    Electronic Resource
    Solid phase epitaxial regrowth of Si1−xGex/Si strained-layer structures amorphized by ion implantation (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 42-44 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strained-layer structures consisting of ∼30–35 nm Si1−xGex (x=0.16–0.29) and 33 nm Si deposited by molecular beam epitaxy on a (100)Si substrate have been amorphized by ion implantation at 40 K with 120 keV As+. Rutherford backscattering/channeling measurements using 2 MeV He+ ions have been used to measure the thickness of the amorphous layer and monitor the subsequent epitaxial regrowth occurring as a result of annealing at 560–600 °C. Angular scans across the {110} planar channels indicate that the initial crystallinity and strain was recovered for x=0.16; however, for x=0.29 crystal quality was greatly reduced and the coherency at the substrate-alloy layer interface was destroyed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100828
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  • 14
    Electronic Resource
    Electronic Resource
    Highly oriented Tl2Ba2Ca2Cu3O10 thin films by pulsed laser evaporation (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 760-762 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated superconducting thin films on MgO(100) substrates with nearly pure Tl2Ba2Ca2Cu3O10 (2:2:2:3) phase using pulsed laser evaporation and post-annealing. The films had c axes perpendicular to the substrates. Superconducting films with onset temperatures of 125 K and zero resistance at 110 K were obtained. X-ray microprobe fluorescence measurements indicate that a typical composition of films is Tl0.66Ba1.77Ca1.46Cu3Ox, which is low in Tl compared to that expected for the 2:2:2:3 phase. A typical grain size is greater than 10 μm as revealed by scanning electron microscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101473
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  • 15
    Electronic Resource
    Electronic Resource
    Bessel beam ultrasonic transducer: Fabrication method and experimental results (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2066-2068 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report experimental results from a first-of-a-kind ultrasonic transducer that generates a beam with a Bessel function profile. Using a technique of nonuniform poling, an axially symmetric Bessel function pattern is "polarized into'' a piezoelectric ceramic element. The resulting circular-disk transducer has the usual full-plating electrode configuration, but produces an ultrasonic beam with a radial displacement profile approximating that of the Bessel function J0 (r), both in amplitude and in phase. The radiation field of a 1-in.-diam, 2.25 MHz Bessel transducer mapped out with a point probe shows good agreement with calculated results using a Gauss-Hermite model. Bessel transducers are of particular interest in attempts to achieve "diffractionless'' beams.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102107
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  • 16
    Electronic Resource
    Electronic Resource
    Preparation of high Tc Tl-Ba-Ca-Cu-O thin films by pulsed laser evaporation and Tl2O3 vapor processing (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1810-1811 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tl-Ba-Ca-Cu-O superconducting thin films with zero-resistance temperatures up to 115 K have been prepared using a Tl2 O3 vapor process on Ba-Ca-Cu-O precursor thin films. The Ba-Ca-Cu-O thin films were made by laser deposition on Y-stabilized ZrO2 substrates. This technique minimizes problems caused by the toxicity of Tl2 O3, and its subsequent decomposition to the volatile and toxic Tl2 O upon heating. Therefore, it may have practical application in the fabrication of high Tc Tl-Ba-Ca-Cu-O superconducting thin-film devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101493
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  • 17
    Electronic Resource
    Electronic Resource
    Planar channeling in GaAs/InxGa1−xAs/GaAs strained-layer structures (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1510-1515 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Planar {110} channeling measurements with 1–2-MeV He+ ions have been used to investigate strained-layer structures of (100) GaAs/InxGa1−xAs/GaAs with x=0.07–0.17. Beam-steering effects in the surface GaAs layer are observed to have a major influence on {110} planar angular scans carried out in the InxGa1−xAs layers resulting generally in a double or more complex-shaped angular dip. A simple computer simulation has been developed which determines the main features of the experimental angular scan data. Comparison of simulation and experimental data allows a reasonable determination of the kink angle θK between the {110} planes for the surface GaAs and underlying strained layer. Only in limiting cases is it possible to unequivocally determine θK from the experimental data alone. They are as follows: (i) when θK=0; (ii) θK〉2ψ pc (ψ pc is the critical angle for {110} planar channeling); and (iii) when the thickness t of the top layer is thin (t(very-much-less-than)2d/ψ pc, where d is the {110} interplanar spacing).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342966
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  • 18
    Electronic Resource
    Electronic Resource
    Computer control and data-acquisition system for the rf test facility (1986)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 57 (1986), S. 1904-1906 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The radio frequency test facility (RFTF) at Oak Ridge National Laboratory, used to test and evaluate high-power ion cyclotron resonance heating (ICRH) systems and components, is monitored and controlled by a multicomponent computer system. This data-acquisition and control system consists of three major hardware elements: (1) an Allen-Bradley PLC-3 programmable controller, (2) a VAX 11/780 computer, and (3) a CAMAC serial highway interface. Operating in LOCAL as well as REMOTE mode, the programmable logic controller (PLC) performs all the control functions of the test facility. The VAX computer acts as the operator's interface to the test facility by providing color mimic panel displays and allowing input via a trackball device. The VAX also provides archiving of trend data acquired by the PLC. Communications between the PLC and the VAX are via the CAMAC serial highway. Details of the hardware, software, and the operation of the system are presented in this paper.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1138790
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  • 19
    Electronic Resource
    Electronic Resource
    Apparatus and technique for reconstruction of flaws using model-based elastic wave inverse ultrasonic scattering (1986)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 57 (1986), S. 3089-3098 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An automated multiviewing ultrasonic apparatus and signal processing routine have been developed for utilization in nondestructive evaluation (NDE) of materials. The instrument has been developed to take advantage of recent advances in long and intermediate wavelength inverse scattering of elastic waves, and provides a 3-D reconstruction of a flaw. Although the reconstruction obtained does not contain fine details of the flaw's structure, it provides sufficient information about the flaw (size, orientation, and selected materials properties) so that failure-predictive decisions can be made.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1139211
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  • 20
    Electronic Resource
    Electronic Resource
    Conversion of the SRS to a higher brilliance lattice (invited) : International conference on synchrotron radiation instrumentation (1989)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 60 (1989), S. 1377-1381 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The SRS at Daresbury has been upgraded by the addition of quadrupoles which reduce the emittance by a factor of 15. In order to do this without disturbing the beamlines, all 16 straight sections were rebuilt. Additional sextupole and octupole magnets were included, as was additional pumping capacity. Completely new beam monitor and vertical steering systems have been incorporated. The SRS was shut down on 1 October 1986 and, after recommissioning, regular scheduled operation for users at the rate of nearly 6000 h per year has been in effect again since June 1987. Scheduled operation is at 2 GeV with the 5T wiggler operational. The gain in brightness is as expected. Maximum beam current at 2 GeV is now 280 mA. Beam lifetime is 20 h at 200 mA. Diffraction patterns of small angle scattering from muscle obtained with an electronic area detector show that with the improved brilliance, diffraction lines corresponding to spacings exceeding 15 000 A(ring) can be clearly resolved. Work is about to start on the provision of a second superconducting wiggler with 6T field feeding five new experimental stations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1140996
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