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Understanding and improving the deposition conditions of SiO2 thin films obtained by ultrasonic sol-gel procedure (1994)

Marage, P. ; Langlet, M. ; Joubert, J. C.

Springer

Journal of sol gel science and technology 2 (1994), S. 615-618

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ISSN: 1573-4846

Keywords: SiO2 ; ultrasonic pulverization ; sol-gel ; thin films

Source: Springer Online Journal Archives 1860-2000

Topics: Chemistry and Pharmacology

Notes: Abstract Sol-gel deposition of an ultrasonically atomized aerosol has been proven to be a convenient thin film deposition method. Flexibility of the ultrasonic process allows the use of a large range of source solutions. In this paper we describe and discuss the deposition conditions of SiO2 films. The chemical parameters are contemplated and we discuss the influence of ultrasonic waves on the reliability of our process. Source solutions and SiO2 film properties are studied by viscosimetry, Fourier Transform IR spectroscopy and spectroscopic ellipsometry.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1007/BF00486320

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