ISSN:
1349-9432
Keywords:
avalanche photodiode
;
superlattice
;
InAlGaAs/InAlAs
;
dark current
;
ultra-low optical power
;
near infrared
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Abstract Static characteristics of two different structured InAlGaAs/InAlAs superlattice avalanche photodiodes (SLAPDs) cooled by liquid nitrogen were evaluated at a wavelength of 1.5 μm. The dark current of the SLAPD having a thick superlattice layer of 0.504 μm was 5 × 10−13 A. This was successively reduced by four orders of magnitude compared to that of the thin layer SLAPD of 0.231 μm at a breakdown voltage of around 20 V. The thickened layer was effective in suppressing tunneling dark current. An output current of 1.7×l0−12 A at a bias voltage of 15 V was measured for an optical input with a wavelength of 1.5 μm and a signal power of 1 × 10−12 W. This showed a sharp distinction from the dark current.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/s10043-999-0459-8
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