ISSN:
1572-8986
Keywords:
Reactive ion etching
;
loading
;
uniformity
;
anisotropy
;
triode pattern transfer
Source:
Springer Online Journal Archives 1860-2000
Topics:
Chemistry and Pharmacology
,
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Technology
Notes:
Abstract Dry etching of compound semiconductors is becoming increasingly important as design ruler shrink for electronic devices. For photonic device applications, dry or plasma etching is used fin- device isolation, fine-line pattern transfer, and fabrication of optical quality interfaces. As has been well established for Si and W. plasma etching at reduced temperatures can provide superior critical dimension control and obviate the need for operating at high bias voltages that produce excessively energetic ion bombardment t. In this work, we explore low-temperature (−60 C to +60 C) etching of the compound semiconductors GaAs, AlGaAs, and AlAs, In addition to improving etch anisotropy, which provides critical dimension control, rye find thut processing at lower temperatures improves microuniformity and reduces loading effects. At high lemperaturcs, where larger samples are observed to etch more slowly than smaller pieces (loading effect), etching rates appear limited bv reactant transport to the wafer. In this regime, both microuniformity and macrouniformity arc poor. As the temperature is reduced, the etching rate becomes limited by surfitce processes us a residue containing the semiconductor elements, etchant gases, and residual background gases forms on the surface. hi this regime, the etch rare becomes independent of surface area and uniformity is improved.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF01465880
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