ISSN:
1436-5073
Keywords:
silicon-germanium alloys
;
composition determination
;
lattice strain determination
;
convergent beam electron diffraction
;
ion beam analysis
Source:
Springer Online Journal Archives 1860-2000
Topics:
Chemistry and Pharmacology
Notes:
Abstract Si1−x Ge x heterostructures have been grown by molecular beam epitaxy, with nominal compositions of 10 and 15 at %. Analytical electron microscopy, Rutherford backscattering spectrometry and ion channeling have been used in order to determine film thickness, Ge molar fraction and tetragonal distortion. The actual Ge concentrations were found to be smaller than the nominal ones. For all the SiGe films a coherent growth was found, with a small deviation from the perfect tetragonal distortion. The good agreement found between the results obtained by each analytical technique demonstrate that these methods of characterization are powerful tools for the control of the epitaxial layer parameters.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF01244541
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