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  • 1
    ISSN: 1573-4854
    Keywords: porous silicon ; patterning ; photolythography dielectric filters ; reactive ion etching (RIE) ; microoptics
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Porous silicon (PS) layer systems have a broad range of possible applications. An advantage is the good control of the refractive index and the etch rate of the layers by the applied current density and the time respectively. For micro-optical devices you need patterned PS. For some optical devices it is not sufficient to have only one filter but it is necessary to form filters with different properties on a small area. We applied a method (M. Frank, U.B. Schallenberg, N. Kaiser, and W. Buß, in Conference on Miniaturized Systems with Microoptics and Micromechanics, edited by M.E. Moamedi, L.J. Hornbeck, and K.S.J. Pister (SPIE, San Jose, 1997), SPIE Proceedings Series 3008, p. 265) to PS which fits this goal by the following steps: fabrication of the desired reflectors below each other and partial removal of upper reflectors with reactive ion etching (RIE). The technological aspects of patterning PS after the fabrication are an important topic of this work. Problems are discussed in detail and solutions are given.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1573-4854
    Keywords: porous silicon ; oxidation ; liquid crystal
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract In this paper we demonstrate the filling of porous silicon (PS) layers with liquid crystals (LC's) in order to control the reflectance electrically. The preparation of PS and the choice of the right group of LC's will be presented. Especially an oxidation of PS is necessary so that the methods and parameters of oxidation will also be discussed. As a first result the increasing and decreasing of the thickness oscillations in the reflectance as a function of the applied voltage can be observed.
    Type of Medium: Electronic Resource
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