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  • photoreflectance  (2)
  • 1
    Electronic Resource
    Electronic Resource
    Optical investigations of strained InGaAs quantum wells (1997)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 7 (1997), S. 307-310 
    Details
    ISSN: 1057-9257
    Keywords: photoreflectance ; photoluminescence ; InGaAs/GaAs quantum well ; type I and II excitonic transition ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: InGaAs/GaAs MOCVD-grown quantum wells have been investigated. Photoluminescence (PL) measurements have shown heavy-hole-related excitonic transitions within the temperature range from 10 to 100 K for all samples. In room-temperature photoreflectance (PR), sharp heavy- and light-hole excitonic transitions in the quantum wells have been observed. The transition energies obtained have been compared with values derived from theoretical considerations using the envelope function model including lattice-mismatch-related stress. The heavy- and light-hole transitions have been identified as excitonic transitions of types I and II respectively. © 1997 John Wiley & Sons, Ltd.
    Additional Material: 3 Ill.
    Type of Medium: Electronic Resource
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    Paper (German National Licenses)
  • 2
    Electronic Resource
    Electronic Resource
    Photoreflectance spectroscopy of low-dimensional GaAs/AlGaAs structures (1997)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 7 (1997), S. 241-247 
    Details
    ISSN: 1057-9257
    Keywords: photoreflectance ; low-dimensional structure ; GaAs ; AlGaAs ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Results of room-temperature photoreflectance measurements on three GaAs/Al0.33Ga0.67As multiquantum well (MQW) structures with three different widths of wells and on two GaAs/Al0.33Ga0.67As high-electron-mobility transistor (HEMT) structures are presented. Energy-gap-related transitions in GaAs and AlGaAs were observed. The Al content in AlGaAs was determined. MQW transition energies were determined using the first derivative of a Gaussian profile of the measured resonances. In order to identify the transitions in the MQS, the experimentally observed energies were compared with results of the envelope function calculation method for a rectangular quantum well. The Franz-Keldysh oscillation (FKO) model was also used to determine the built-in electric field in various parts of the investigated structures. The values of the electric fields allow us to hypothesise about the origin of these fields. © 1997 John Wiley & Sons, Ltd.
    Additional Material: 7 Ill.
    Type of Medium: Electronic Resource
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    Paper (German National Licenses)
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