ISSN:
1572-9567
Keywords:
computer simulation
;
laser annealing
;
nonequilibrium molecular dynamics
;
rapid solidification
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Abstract A new nonequilibrium molecular dynamics computer simulation method has been developed for the study of rapid interface kinetics. In this method a strong heat gradient is set up to simulate the action of a laser in a (100) f.c.c. crystalline substrate composed of Lennard-Jones atoms. The substrate is shown to melt partially and then to regrow epitaxially as a crystalline solid. The characteristics of properties such as the melt depth as a function of time, together with the interface temperature and interface velocity as a function of time, are shown to display all the qualitative features of experimental studies of the laser annealing of silicon. The construction of the interface response function (interface velocity versus temperature) is also shown.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF01133542
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