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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Journal of sol gel science and technology 9 (1997), S. 295-301 
    ISSN: 1573-4846
    Keywords: magnesium oxide (MgO) ; thin film ; preferential orientation ; dielectric constant ; refractive index
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract MgO thin films with either (111) or (200) preferential orientation have been prepared on (100) Si substrates by sol-gel method after a heat-treatment at 800°C. The obtained (111) preferentially oriented MgO film has a dielectric constant of 7.0 with a loss factor of 5% and a dielectric strength higher than 8 × 105 V/cm. The optical refractive index, which depends on the film thickness, is 1.71 when the film thickness is 260 nm. The surface structure of the Si substrate is believed to affect the preferential orientation of the sol-gel derived MgO film. Specifically, the microstructures at the interface indicate an interdiffusion of Mg, O, and Si between the film and the substrate.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Journal of sol gel science and technology 9 (1997), S. 295-301 
    ISSN: 1573-4846
    Keywords: magnesium oxide (MgO) ; thin film ; preferential orientation ; dielectric constant ; refractive index
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract MgO thin films with either (111) or (200) preferential orientation have been prepared on (100) Si substrates by sol-gel method after a heat-treatment at 800°C. The obtained (111) preferentially oriented MgO film has a dielectric constant of 7.0 with a loss factor of 5% and a dielectric strength higher than 8×105 V/cm. The optical refractive index, which depends on the film thickness, is 1.71 when the film thickness is 260 nm. The surface structure of the Si substrate is believed to affect the preferential orientation of the sol-gel derived MgO film. Specifically, the microstructures at the interface indicate an interdiffusion of Mg, O, and Si between the film and the substrate.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Springer
    Journal of sol gel science and technology 17 (2000), S. 37-45 
    ISSN: 1573-4846
    Keywords: sol-gel ; ormocers ; films ; quantum dots ; PbS
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract A new method for the preparation of semiconductor PbS quantum dot-doped Ormocer (Organically Modified Ceramic) has been developed. The Ormocer matrix was prepared through the hydrolysis and condensation of alkoxysilane precursors (sol-gel process). Formation of PbS particles took place in the porous Ormocer through H2S gas reaction with a lead precursor incorporated at the solution stage. Control of the PbS dot size was achieved through the use of organically substituted trifunctional silanes. Particle formation and growth was studied under different experimental conditions (e.g. temperature and lead precursor concentrations) where nucleation and aggregation processes occurred. Determination of the average particle size was done by XRD. Transmission electron microscopy was also used to determine particle diameter as well as particle size distribution. Optical absorption spectra were measured at the UV-VIS wavelength range. Absorption edge blue shifts showed the quantum confinement effect in these materials. The non-hydrolyzed groups bonded to the silane prevented uncontrolled nucleation and aggregation during the particle formation and growth, i.e. at the solution stage by the homogeneous distribution of the Pb salts or at the xerogel state by the capping of the growing particles.
    Type of Medium: Electronic Resource
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