ISSN:
1573-2746
Keywords:
interphase boundaries
;
misfit dislocations
;
interdiffusion
;
vacancy flows
;
thin films
Source:
Springer Online Journal Archives 1860-2000
Topics:
Chemistry and Pharmacology
,
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract Interdiffusion processes in epitaxial single-crystal Pd/Ag thin films within the temperature range 20°–500°C are studied by transmission electron microscopy, electron diffraction and electrical resistance methods. Homogenization is investigated both during deposition and during annealing. The mass transfer kinetics is found to depend significantly on the original structure of the interphase boundary (dislocations present or not) and on its reconstruction due to interdiffusion. Regular networks of misfit dislocations at the interface can retard interdiffusion, while network failures lead to acceleration of homogenization process. The vacancy flows play a decisive role in these processes. The effects of interphase dislocations on the DIGM, DIR and RID processes are discussed. The numerical study of electrical resistance variations during annealing is carried out. The concentration profiles are plotted for a nontrivial dependence of interdiffusion coefficient on concentration. The numerical results are compared with the experimental data.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00215171
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