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  • YBa2Cu3O7 thin films  (2)
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  • 1
    ISSN: 1572-9605
    Keywords: YBa2Cu3O7 thin films ; microwave surface impedance ; vortex pinning
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The magnetic field dependence of the surface impedance (resistance and reactance) of high-T c thin films is found employing measurements of the quality factor and the frequency of the parallel plate resonator in a dc magnetic field up to 500 Oe at 10 GHz.c-Oriented YBa2Cu3O7 thin films are examined. Enhancement of surface resistance and inductance with increase of magnetic field is observed. The effect of irreversible increase of surface impedance as compared to its initial values after a cycle of magnetic field commutation is found. A qualitative explanation of the observed effects based on the picture of magnetic vortex penetration and accumulation in the film due to strong pinning is presented.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1572-9605
    Keywords: YBa2Cu3O7 thin films ; microwave surface impedance ; magnetic field penetration depth ; parallel-plate resonator
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Measurements of microwave surface impedance of high-T c films at gigahertz frequencies and nitrogen temperature are performed. A simple technique employing a parallel-plate resonator with liquid nitrogen as a dielectric spaces is suggested. The use of a precise mechanical device provides smooth changing of distance between films from 200μm down to zero. Coupling to the resonator is accomplished by means of two small antennas-half-wave vibrators for frequency 10 GHz. The method for determining resistivity and magnetic field penetration depth was based on the analysis of spacer thickness dependences of the resonator quality factor and frequency. YBa2Cu3O7 films produced by a laser deposition technique on CaNdAlO4 substrates withT c =91 K andj c =107 A/cm2 and on NdGaO3 substrates withT c =91 K andj c =106 A/cm2 are examined, and the valuesR s =0.6 mΩ,λ=348 nm atf=8.97 GHz andR s =0.5 mΩ,λ=250 nm atf=10.12 GHz, respectively, are obtained at 77 K.
    Type of Medium: Electronic Resource
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