Publikationsdatum:
2019-07-13
Beschreibung:
Secondary ion mass spectrometry is used to study the effects of substrate temperature on the composition and growth rate of InGaAs/InP(100) multilayers grown by chemical beam epitaxy, metal-organic chemical vapor deposition and solid source molecular beam epitaxy. The growth kinetics of the material grown by the different techniques are analyzed and compared.
Schlagwort(e):
Solid-State Physics
Materialart:
Applied Surface Science (ISSN 0169-4332); 157; 123-128
Format:
text
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