Publication Date:
2019-07-13
Description:
Rare-earth doped ions in polar II-VI semiconductors have recently played an important role in the optical properties of materials and devices. In this study, undoped ZnSe and erbium doped ZnSe films were grown by radio frequency (RF) magnetron sputtering method. Atomic Force Microscopy (AFM) was used together with optical microscopy and UV-Vis spectroscopy to characterize the films. Doped samples were found to have higher surface roughness and quite different surface morphology compared to that of undoped samples. The grown films generally show a relatively smooth and uniform surface indicating that they are of overall good quality. The impact of plasma etching on ZnSe:Er film examined under AFM is also discussed.
Keywords:
Solid-State Physics
Type:
NASA University Research Centers Technical Advances in Aeronautics, Space Sciences and Technology, Earth Systems Sciences, Global Hydrology, and Education; 2 and 3; 101-106; NONP-NASA-CD-1999011585
Format:
text
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