Publication Date:
2017-11-09
Description:
Author(s): S. A. Khattak, M. Hayne, J. Huang, J. Vanacken, V. V. Moshchalkov, L. Seravalli, G. Trevisi, and P. Frigeri We report a comprehensive study of exciton confinement in self-assembled InAs quantum dots (QDs) in strain-engineered metamorphic I n x G a 1 – x As confining layers on GaAs using low-temperature magnetophotoluminescence. As the lattice mismatch (strain) between QDs and confining layers (CLs) increases from... [Phys. Rev. B 96, 195301] Published Wed Nov 08, 2017
Keywords:
Semiconductors II: surfaces, interfaces, microstructures, and related topics
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
Permalink