Publication Date:
2017-05-20
Description:
Author(s): N. K. Lewis, N. B. Clayburn, E. Brunkow, T. J. Gay, Y. Lassailly, J. Fujii, I. Vobornik, W. R. Flavell, and E. A. Seddon The main factor that determines which of the two domains forms upon reconstruction of the Si(110) “ 16 × 2 ” surface has been investigated. Low-energy electron diffraction (LEED) and scanning tunneling microscopy (STM) images showed that the domain orientation was independent of the heating current dire… [Phys. Rev. B 95, 205306] Published Fri May 19, 2017
Keywords:
Semiconductors II: surfaces, interfaces, microstructures, and related topics
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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