Publication Date:
2019-07-12
Description:
Silicon dioxide films grown under dry and wet oxidation environment on beta-SiC films have been studied. The beta-SiC films had been heteroepitaxially grown on both on-axis and 2-deg off-axis (001) Si substrates. Capacitance-voltage and conductance-voltage characteristics of metal-oxide-semiconductor structures were measured in a frequency range of 10 kHz to 1 MHz. From these measurements, the interface trap density and the effective fixed oxide charge density were observed to be generally lower for off-axis samples.
Keywords:
SOLID-STATE PHYSICS
Type:
Electrochemical Society, Journal (ISSN 0013-4651); 137; 221-225
Format:
text
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