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  • SOLID-STATE PHYSICS  (6)
  • 1
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    Directional solidification of silicon in carbon crucibles by an oscillating crucible technique (1982)
    In:  Other Sources
    Details
    Publication Date: 2011-08-18
    Description: The quality of silicon cast by present techniques is limited by the presence of dislocations and grain boundaries in unseeded growth and by cellular structures with dislocation networks in the case of the seeded growth. To address these concerns, a new method of directional solidification called the oscillating crucible technique (OCT) is developed. During growth, a carbon crucible is oscillated to provide for effective stirring of the melt. This growth technique (seeded growth only), along with material characterization and solar-cell fabrication and testing, is described. Solar-cell efficiencies of up to 13 percent at 100 mW/sq cm area obtained in the single crystalline areas. Minority-carrier diffusion lengths exceeding 100 microns are measured even in the polycrystalline areas of the wafers. Limitations of the present setup and possible future improvements are discussed.
    Keywords: SOLID-STATE PHYSICS
    Format: text
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    NASA TECHNICAL REPORTS
  • 2
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    Electrical and Structural Characterization of Web Dendrite Crystals (1984)
    In:  CASI
    Details
    Publication Date: 2014-09-12
    Description: Minority carrier lifetime distributions in silicon web dendrites are measured. Emphasis is placed on measuring areal homogeneity of lifetime, show its dependancy on structural defects, and its unique change during hot processing. The internal gettering action of defect layers present in web crystals and their relation to minority carrier lifetime distributions is discussed. Minority carrier lifetime maps of web dendrites obtained before and after high temperature heat treatment are compared to similar maps obtained from 100 mm diameter Czochralski silicon wafers. Such maps indicate similar or superior areal homogeneity of minority carrier lifetime in webs.
    Keywords: SOLID-STATE PHYSICS
    Type: JPL Proc. of the Flat-Plate Solar Array Proj. Res. Forum on the High-Speed Growth and Characterization of Crystals for Solar Cells; p 565-574
    Format: text
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    NASA TECHNICAL REPORTS
  • 3
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    Method of increasing minority carrier lifetime in silicon web or the like (1983)
    In:  CASI
    Details
    Publication Date: 2019-06-28
    Description: A silicon dendrite is grown as a ribbon forming two silicon crystal layers which are separated by an interface layer which contains a large number of defects. Significant increase of minority carrier lifetime with homogeneous distribution at the outer surfaces of the two silicon crystal layers is achieved by processing the web in an atmosphere of a selected gas, e.g., oxygen, nitrogen or an inert gas, for about 30 minutes to several hours at a temperature preferably on the order of 900 to 1200 C.
    Keywords: SOLID-STATE PHYSICS
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    NASA TECHNICAL REPORTS
  • 4
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    Growth of silicon carbide crystals on a seed while pulling silicon crystals from a melt (1979)
    In:  CASI
    Details
    Publication Date: 2019-06-27
    Description: A saturated solution of silicon and an element such as carbon having a segregation coefficient less than unity is formed by placing a solid piece of carbon in a body of molten silicon having a temperature differential decreasing toward the surface. A silicon carbide seed crystal is disposed on a holder beneath the surface of the molten silicon. As a rod or ribbon of silicon is slowly pulled from the melt, a supersaturated solution of carbon in silicon is formed in the vicinity of the seed crystal. Excess carbon is emitted from the solution in the form of silicon carbide which crystallizes on the seed crystal held in the cool region of the melt.
    Keywords: SOLID-STATE PHYSICS
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  • 5
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    Silicon ribbon growth by a capillary action shaping technique (1976)
    In:  CASI
    Details
    Publication Date: 2019-06-27
    Description: The technique of silicon ribbon growth by the capillary action shaping is assessed for applicability to photovoltaic power device material. Ribbons 25 mm in width and up to 0.5 m in length have been grown from SiC dies, and some new characteristics of growth from such dies have been identified. Thermal modifiers have been studied, and systems were developed which reduce the frozen-in stress un silicon ribbons and improve the thickness uniformity of the ribbons. Preliminary spreading resistance measurements indicate that neither surface striations nor twin boundaries give rise to appreciable resistivity variations, but that large-angle grain boundaries cause local resistivity increases of up to 200%.
    Keywords: SOLID-STATE PHYSICS
    Type: NASA-CR-149815 , QPR-3
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    NASA TECHNICAL REPORTS
  • 6
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    Silicon ribbon growth by a capillary action shaping technique (1976)
    In:  CASI
    Details
    Publication Date: 2019-06-27
    Description: The crystal growth method described is a capillary action shaping technique. Meniscus shaping for the desired ribbon geometry occurs at the vertex of a wettable die. As ribbon growth depletes the melt meniscus, capillary action supplies replacement material. A capillary die is so designed that the bounding edges of the die top are not parallel or concentric with the growing ribbon. The new dies allow a higher melt meniscus with concomitant improvements in surface smoothness and freedom from SiC surface particles, which can degrade perfection.
    Keywords: SOLID-STATE PHYSICS
    Type: NASA-CR-149814 , ERDA/JPL-954144-76/01 , QTPR-4
    Format: application/pdf
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    NASA TECHNICAL REPORTS
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