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  • SOLID-STATE PHYSICS  (11)
  • 1
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    Ellipsometric and optical study of amorphous hydrogenated carbon films (1986)
    In:  Other Sources
    Details
    Publication Date: 2011-08-19
    Description: A low-frequency plasma deposition system was used to prepare amorphous hydrogenated carbon (a-C:H) films. The growth energy was varied by changing the power and/or pressure of the plasma. Ellipsometry and optical absorption were used to obtain the optical energy gap, the density of states, and the refractive index. Ion sputtering was used in conjunction with ellipsometry and Auger electron spectroscopy to get absolute sputtering rates. The plasma deposited a-C:H is amorphous with an optical energy gap of approximately 2.0-2.4 eV. These a-C:H films have higher density and/or hardness, higher refractive index, and lower optical energy gaps with increasing energy of the particles in the plasma, while the density of states remains unchanged. These results are in agreement with, and give a fine-tuned positive confirmation to, an existing conjecture on the nature of the a-C:H films (Kaplan et al., 1985).
    Keywords: SOLID-STATE PHYSICS
    Type: Electrochemical Society, Journal (ISSN 0013-4651); 133; 2339-234
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  • 2
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    Plasma deposited hydrogenated carbon on GaAs and InP (1985)
    In:  Other Sources
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    Publication Date: 2011-08-19
    Description: The properties of diamond like carbon films grown by RF flow discharge 30 kHz plasma using methane are reported. The Cis XPS line shape of films showed localized hybrid carbon bonds as low as 40 to as high as 95 percent. Infrared spectroscopy and N(15) nuclear reaction profiling data indicated 35 to 42 percent hydrogen, depending inversely on deposition temperature. The deposition rate of films on Si falls off exponentially with substrate temperature, and nucleation does not occur above 200 C on GaAs and InP. Optical data of the films showed bandgap values of 2.0 to 2.4 eV increasing monotonically with CH4 flow rate.
    Keywords: SOLID-STATE PHYSICS
    Type: Journal of Vacuum Science and Technology A (ISSN 0734-2101); 3; 900-903
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  • 3
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    Improved synthesis of ceramic superconductors with alkaline earth peroxides - Synthesis and processing of Ba2YCu3O(7-x) (1988)
    In:  Other Sources
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    Publication Date: 2019-06-28
    Description: Synthesis processes for the preparation of ceramic conductors Ba2YCu3O(7-x) from BaO2 or BaCO3 in flowing O2 or N2 are described, and the characteristics of the materials produced in these processes are compared. Results of EDAX, XRD, SEM, and dc resistivity analyses demonstrated that superconducting materials made from BaO2 were more homogeneous, denser, and more metallic than materials produced from BaCO3, because of the higher reactivity of BaO2. Potential applications of this processes are discussed.
    Keywords: SOLID-STATE PHYSICS
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  • 4
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    Interaction of Au, Ag, and Bi ions with Ba2YCu3O(7-y) - Implications for superconductor applications (1988)
    In:  Other Sources
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    Publication Date: 2019-06-28
    Description: Results are presented on the reactions of Au, Ag, and Bi ions with Ba2YCu3O(7-y) oxides and on the properties of the resultant materials. The results indicate that Au(3+) structural chemistry makes gold an excellent candidate for multiphase structures of the Ba2Y(Cu/1-x/Au/x/)3O(7-y)-type substituted superconductors. Silver is structurally and chemically compatible with the perovskite structure, but when it forms a second phase, it does so without the destruction of the superconducting phase, making silver a useful metal for metal/ceramic applications. On the other hand, bismuth was shown to degrade Tc phase or to form other phases, indicating that it may not be useful in applications with rare-earth-based superconductors.
    Keywords: SOLID-STATE PHYSICS
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  • 5
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    Carbon films grown from plasma on III-V semiconductors (1985)
    In:  CASI
    Details
    Publication Date: 2019-07-13
    Description: Dielectric carbon films were grown on n- and p-type GaAs and InP substrates using plasmas generated at 30 KHz from gaseous hydrocarbons. The effect of gas source, flow rate, and power on film growth were investigated. Methane and n-butane gases were utilized. The flow rate and power ranged from 30 to 50 sccm and 25 to 300 W, respectively. AES measurements show only carbon to be present in the films. The relative Ar ion sputtering rate (3 KeV) of carbon depends on the ratio power/pressure. In addition, the degree of asymmetry associated with the carbon-semiconductor interface is approximately power-independent. SIMS spectra indicate different H-C bonding configurations to be present in the films. Band gaps as high as 3.05 eV are obtained from optical absorption studies.
    Keywords: SOLID-STATE PHYSICS
    Type: NASA-TM-87140 , E-2766 , NAS 1.15:87140 , Meeting of the Electrochem. Soc.; Oct 11, 1985 - Oct 17, 1985; Las Vegas, NV; United States
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  • 6
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    Ellipsometric and optical study of some uncommon insulator films on 3-5 semiconductors (1985)
    In:  CASI
    Details
    Publication Date: 2019-07-13
    Description: Optical properties of three types of insulating films that show promise in potential applications in the 3-4 semiconductor technology were evaluated, namely a-C:H, BN and CaF2. The plasma deposited a-C:H shows an amorphous behavior with optical energy gaps of approximately 2 to 2.4 eV. These a-C:H films have higher density and/or hardness, higher refractive index and lower optical energy gaps with increasing energy of the particles in the plasma, while the density of states remains unchanged. These results are in agreement, and give a fine-tuned positive confirmation to an existing conjecture on the nature of a-C:H films (1). Ion beam deposited BN films show amorphous behavior with energy gap of 5 eV. These films are nonstoichiometric (B/N approximately 2) and have refractive index, density and/or hardness which are dependent on the deposition conditions. The epitaxially grown CaF2 on GaAs films have optical parameters equal to bulk, but evidence of damage was found in the GaAs at the interface.
    Keywords: SOLID-STATE PHYSICS
    Type: NASA-TM-87135 , E-2750 , NAS 1.15:87135 , Meeting of the Electrochem. Soc.; Oct 13, 1985 - Oct 18, 1985; Las Vegas, NV; United States
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  • 7
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    Plasma deposited diamondlike carbon on GaAs and InP (1984)
    In:  CASI
    Details
    Publication Date: 2019-07-13
    Description: The properties of diamond like carbon films grown by RF flow discharge 30 kHz plasma using methane are reported. The Cls XPS line shape of films showed localized hybrid carbon bonds as low as 40 to as high as 95 percent. Infrared spectroscopy and N(15) nuclear reaction profiling data indicated 35 to 42 percent hydrogen, depending inversely on deposition temperature. The deposition rate of films on Si falls off exponentially with substrate temperature, and nucleation does not occur above 200 C on GaAs and InP. Optical data of the films showed bandgap values of 2.0 to 2.4 eV increasing monotonically with CH4 flow rate.
    Keywords: SOLID-STATE PHYSICS
    Type: NASA-TM-86870 , E-2332 , NAS 1.15:86870 , Natl. Symp. of the Am. Vacuum Soc.; Dec 03, 1984 - Dec 07, 1984; Reno, NV; United States
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  • 8
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    Advantages of barium peroxide in the powder synthesis of perovskite superconductors (1988)
    In:  Other Sources
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    Publication Date: 2019-07-13
    Description: This paper compares reaction chemistry, material processing, and material characteristics for the solid state reaction using BaCO3 or BaO2 in the synthesis of perovskite superconductors. Results are presented for weight loss and X-ray diffraction, sample morphology and homogeneity as monitored by SEM and EDS, and the superconductivity critical temperature and ac susceptibility. Greater mass density, increased sample homogeneity, lower resistance, and improved reproducibility for material are found when BaO32 is used.
    Keywords: SOLID-STATE PHYSICS
    Type: High-temperature superconductors; Nov 30, 1987 - Dec 04, 1987; Boston, MA; United States
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  • 9
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    Thermal and structural stability of cosputtered amorphous Ta(x)Cu(1-x) alloy thin films on GaAs (1986)
    In:  Other Sources
    Details
    Publication Date: 2019-07-12
    Description: The characteristics of thin films of Ta-Cu, prepared over a wide range of compositions by cosputter deposition onto GaAs and fused quartz substrates, are studied by X-ray diffraction and van der Pauw resistivity measurement. Results show films to be amorphous over the range of 55-95 at. pct, and show Ta(93)Cu(7) barriers to be effective in preventing Au in-diffusion, with a 3000-A layer remaining unpenetrated after an annealing at 700 C for 20 min. Diffusion of Ga and/or As into amorphous 93 at. pct Ta is found to be more rapid than that of Au, and interfacial reactions were shown to form compounds including Ta3Au, CuAu, TaAs2, and Ga3Cu7 above 700 C.
    Keywords: SOLID-STATE PHYSICS
    Type: Journal of Applied Physics (ISSN 0021-8979); 60; 4281-428
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  • 10
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    Auger electron spectroscopy, secondary ion mass spectroscopy and optical characterization of a-C-H and BN films (1986)
    In:  CASI
    Details
    Publication Date: 2019-07-13
    Description: The amorphous dielectrics a-C:H and BN were deposited on III-V semiconductors. Optical band gaps as high as 3 eV were measured for a-C:H generated by C4H10 plasmas; a comparison was made with bad gaps obtained from films prepared by CH4 glow discharges. The ion beam deposited BN films exhibited amorphous behavior with band gaps on the order of 5 eV. Film compositions were studied by Auger electron spectroscopy (AES), x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). The optical properties were characterized by ellipsometry, UV/VIS absorption, and IR reflection and transmission. Etching rates of a-C:H subjected to O2 dicharges were determined.
    Keywords: SOLID-STATE PHYSICS
    Type: NASA-TM-87258 , E-2950 , NAS 1.15:87258 , Spring Meeting of the Materials Research Society; Apr 15, 1986 - Apr 18, 1986; Palo Alto, CA; United States
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