Publication Date:
2011-08-19
Description:
A novel approach to determining absorption coefficients in thin films using luminescence is described. The technique avoids many of the difficulties typically encountered in measurements of thin samples, Fabry-Perot effects, for example, and can be applied to a variety of materials. The absorption edge for GaAs/AlGaAs multiple quantum well structures, with quantum well widths ranging from 54 to 193 A is examined. Urbach (1953) parameters and excitonic linewidths are tabulated.
Keywords:
SOLID-STATE PHYSICS
Type:
Applied Physics Letters (ISSN 0003-6951); 54; 1356-135
Format:
text
Permalink