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  • SOLID-STATE PHYSICS  (2)
  • 1
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    Proton-induced degradation of VUV transmission of LiF and MgF2 (1980)
    In:  Other Sources
    Details
    Publication Date: 2019-06-28
    Description: Proton-induced degradation of vacuum ultraviolet (VUV) transmittance of LiF and MgF2 was measured for 85- and 600-MeV protons for a fluence up to 2.8 x 10 to the 13th p/sq cm. Transmittances were measured from 105 to 210 nm. When the irradiation level for a given material is expressed in terms of absorbed energy per unit of volume of crystal, 85- and 600-MeV protons produce the same degradation. MgF2 is substantially more radiation resistant than LiF in the VUV. Irradiation of LiF with 1.8 x 10 to the 13th p/sq cm at 85 MeV changed the transmittance of the hydrogen Ly-alpha line at 121.6 nm from 55 to 23%. The corresponding change for MgF2 was from 52 to 42% for 2.8 x 10 to the 13th p/sq cm.
    Keywords: SOLID-STATE PHYSICS
    Type: Applied Optics; 19; Dec. 15
    Format: text
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    NASA TECHNICAL REPORTS
  • 2
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    Radiation effects induced in pin photodiodes by 40- and 85-MeV protons (1985)
    In:  CASI
    Details
    Publication Date: 2019-07-20
    Description: PIN photodiodes were bombarded with 40- and 85-MeV protons to a fluence of 1.5 x 10 to the 11th power p/sq cm, and the resulting change in spectral response in the near infrared was determined. The photocurrent, dark current and pulse amplitude were measured as a function of proton fluence. Changes in these three measured properties are discussed in terms of changes in the diode's spectral response, minority carrier diffusion length and depletion width. A simple model of induced radiation effects is presented which is in good agreement with the experimental results. The model assumes that incident protons produce charged defects within the depletion region simulating donor type impurities.
    Keywords: SOLID-STATE PHYSICS
    Type: NASA-CR-175678 , NAS 1.26:175678 , PTR-85-2
    Format: application/pdf
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    NASA TECHNICAL REPORTS
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