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  • 1
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    Silicon carbide, a semiconductor for space power electronics (1991)
    In:  Other Sources
    Details
    Publication Date: 2011-08-24
    Description: After many years of promise as a high temperature semiconductor, silicon carbide (SiC) is finally emerging as a useful electronic material. Recent significant progress that has led to this emergence has been in the area of crystal growth and device fabrication technology. High quality of single-crystal SiC wafers, up to 25 mm in diameter, can now be produced routinely from boules grown by a high temperature (2700 K) sublimation process. Device fabrication processes, including chemical vapor deposition (CVD), in situ doping during CVD, reactive ion etching, oxidation, metallization, etc. have been used to fabricate p-n junction diodes and MOSFETs. The diode was operated to 870 K and the MOSFET to 770 K.
    Keywords: SOLID-STATE PHYSICS
    Type: In: Space nuclear power systems; Proceedings of the 8th Symposium, Albuquerque, NM, Jan. 6-10, 1991. Pt. 3 (A93-13751 03-20); p. 954-959.
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  • 2
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    Silicon carbide, an emerging high temperature semiconductor (1991)
    In:  CASI
    Details
    Publication Date: 2013-08-31
    Description: In recent years, the aerospace propulsion and space power communities have expressed a growing need for electronic devices that are capable of sustained high temperature operation. Applications for high temperature electronic devices include development instrumentation within engines, engine control, and condition monitoring systems, and power conditioning and control systems for space platforms and satellites. Other earth-based applications include deep-well drilling instrumentation, nuclear reactor instrumentation and control, and automotive sensors. To meet the needs of these applications, the High Temperature Electronics Program at the Lewis Research Center is developing silicon carbide (SiC) as a high temperature semiconductor material. Research is focussed on developing the crystal growth, characterization, and device fabrication technologies necessary to produce a family of silicon carbide electronic devices and integrated sensors. The progress made in developing silicon carbide is presented, and the challenges that lie ahead are discussed.
    Keywords: SOLID-STATE PHYSICS
    Type: NASA, Washington, Technology 2000, Volume 2; p 171-178
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  • 3
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    Silicon carbide semiconductor technology for high temperature and radiation environments (1993)
    In:  CASI
    Details
    Publication Date: 2013-08-31
    Description: Viewgraphs on silicon carbide semiconductor technology and its potential for enabling electronic devices to function in high temperature and high radiation environments are presented. Topics covered include silicon carbide; sublimation growth of 6H-SiC boules; SiC chemical vapor deposition reaction system; 6H silicon carbide p-n junction diode; silicon carbide MOSFET; and silicon carbide JFET radiation response.
    Keywords: SOLID-STATE PHYSICS
    Type: Nuclear Propulsion Technical Interchange Meeting, Volume 1; p 445-452
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  • 4
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    Advances in silicon carbide Chemical Vapor Deposition (CVD) for semiconductor device fabrication (1991)
    In:  CASI
    Details
    Publication Date: 2019-07-13
    Description: Improved SiC chemical vapor deposition films of both 3C and 6H polytypes were grown on vicinal (0001) 6H-SiC wafers cut from single-crystal boules. These films were produced from silane and propane in hydrogen at one atmosphere at a temperature of 1725 K. Among the more important factors which affected the structure and morphology of the grown films were the tilt angle of the substrate, the polarity of the growth surface, and the pregrowth surface treatment of the substrate. With proper pregrowth surface treatment, 6H films were grown on 6H substrates with tilt angles as small as 0.1 degrees. In addition, 3C could be induced to grow within selected regions on a 6H substrate. The polarity of the substrate was a large factor in the incorporation of dopants during epitaxial growth. A new growth model is discussed which explains the control of SiC polytype in epitaxial growth on vicinal (0001) SiC substrates.
    Keywords: SOLID-STATE PHYSICS
    Type: NASA-TM-104410 , E-6237 , NAS 1.15:104410 , International High Temperature Electronics Conference; Jun 16, 1991 - Jun 20, 1991; Albuquerque, NM; United States
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  • 5
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    An overview of silicon carbide device technology (1992)
    In:  CASI
    Details
    Publication Date: 2019-07-13
    Description: Recent progress in the development of silicon carbide (SiC) as a semiconductor is briefly reviewed. This material shows great promise towards providing electronic devices that can operate under the high-temperature, high-radiation, and/or high-power conditions where current semiconductor technologies fail. High quality single crystal wafers have become available, and techniques for growing high quality epilayers have been refined to the point where experimental SiC devices and circuits can be developed. The prototype diodes and transistors that have been produced to date show encouraging characteristics, but by the same token they also exhibit some device-related problems that are not unlike those faced in the early days of silicon technology development. Although these problems will not prevent the implementation of some useful circuits, the performance and operating regime of SiC electronics will be limited until these device-related issues are solved.
    Keywords: SOLID-STATE PHYSICS
    Type: NASA-TM-105402 , E-6803 , NAS 1.15:105402 , Symposium on Space Nuclear Power Systems; Jan 12, 1992 - Jan 16, 1992; Albuquerque, NM; United States
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  • 6
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    Development of silicon carbide semiconductor devices for high temperature applications (1991)
    In:  CASI
    Details
    Publication Date: 2019-07-13
    Description: The semiconducting properties of electronic grade silicon carbide crystals, such as wide energy bandgap, make it particularly attractive for high temperature applications. Applications for high temperature electronic devices include instrumentation for engines under development, engine control and condition monitoring systems, and power conditioning and control systems for space platforms and satellites. Discrete prototype SiC devices were fabricated and tested at elevated temperatures. Grown p-n junction diodes demonstrated very good rectification characteristics at 870 K. A depletion-mode metal-oxide-semiconductor field-effect transistor was also successfully fabricated and tested at 770 K. While optimization of SiC fabrication processes remain, it is believed that SiC is an enabling high temperature electronic technology.
    Keywords: SOLID-STATE PHYSICS
    Type: NASA-TM-104398 , E-6217 , NAS 1.15:104398 , International High Temperature Electronics Conference; Jun 16, 1991 - Jun 20, 1991; Albuquerque, NM; United States
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  • 7
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    Silicon carbide, a semiconductor for space power electronics (1991)
    In:  CASI
    Details
    Publication Date: 2019-07-13
    Description: After many years of promise as a high temperature semiconductor, silicon carbide (SiC) is finally emerging as a useful electronic material. Recent significant progress that has led to this emergence has been in the areas of crystal growth and device fabrication technology. High quality single-crystal SiC wafers, up to 25 mm in diameter, can now be produced routinely from boules grown by a high temperature (2700 K) sublimation process. Device fabrication processes, including chemical vapor deposition (CVD), in situ doping during CVD, reactive ion etching, oxidation, metallization, etc. have been used to fabricate p-n junction diodes and MOSFETs. The diode was operated to 870 K and the MOSFET to 770 K.
    Keywords: SOLID-STATE PHYSICS
    Type: NASA-TM-103655 , NAS 1.15:103655 , Symposium on Space Nuclear Power Systems; Jan 06, 1991 - Jan 10, 1991; Albuquerque, NM; United States
    Format: application/pdf
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