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  • 1
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    Optical characterization of semi-insulating GaAs - Determination of the Fermi energy, the concentraion of the midgap EL2 level and its occupancy (1987)
    In:  Other Sources
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    Publication Date: 2011-08-19
    Description: The key electronic characteristics of semiinsulating GaAs, i.e., the Fermi energy, concentration, and occupancy of the midgap donor EL2, and the net concentration of ionized acceptors can all be determined from high-resolution measurements of the EL2 intracenter absorption. The procedure is based on the measurement of zero-phonon line intensity before and after the complete transfer of EL2 to its metastable state followed by thermal recovery. The procedure is quantitative, involves no fitting parameters, and unlike existing methods, is applicable even when a significant part of the EL2 is ionized.
    Keywords: SOLID-STATE PHYSICS
    Type: Applied Physics Letters (ISSN 0003-6951); 51; 511-513
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  • 2
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    Inverted thermal conversion - GaAs, a new alternative material for integrated circuits (1986)
    In:  Other Sources
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    Publication Date: 2011-08-19
    Description: A new type of GaAs is developed which exhibits inverted thermal conversion (ITC); i.e., it converts from conducting to semiinsulating upon annealing at about 850 C. In device fabrication, its low resistivity prior to high-temperature processing differentiates ITC GaAs from the standard semiinsulating GaAs. The ITC characteristics are obtained through control of the concentration of the midgap donor EL2 based on heat treatment and crystal-growth modification. Thus EL2 does not exist in the conducting state of ITC GaAs. Conversion to the semiinsulating state during 850 C annealing is caused by the formation of EL2.
    Keywords: SOLID-STATE PHYSICS
    Type: Applied Physics Letters (ISSN 0003-6951); 49; 892-894
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  • 3
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    On the behaviour and origin of the major deep level (EL2) in GaAs (1982)
    In:  Other Sources
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    Publication Date: 2011-08-18
    Description: In an extensive crystal growth and characterization study of Bridgman-grown GaAs it was established that the following factors affect the concentration of the EL2 level: (1) the As pressure during growth; (2) the partial pressure of Ga2O; (3) the concentration of shallow donors and acceptors; and (4) the post-growth cooling cycle. The role of these factors is qualitatively and quantitatively explained by attributing the 0.82 eV donor state to the antisite defect As-sub-Ga formed as a result of Ga-vacancy migration during the post-growth cooling of the crystals.
    Keywords: SOLID-STATE PHYSICS
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  • 4
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    Characteristics of GaAs with inverted thermal conversion (1987)
    In:  Other Sources
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    Publication Date: 2011-08-19
    Description: GaAs crystals exhibiting inverted thermal conversion (ITC) of resistivity were investigated in conjunction with standard semiinsulating (SI) GaAs regarding characteristics important in device processing. It was established that dislocation density and Si implant activation are unaffected by transformation to the ITC state. However, in ITC GaAs the controlled increase of the EL2 (native midgap donor) concentration during annealing makes it possible to attain resistivities one order of magnitude greater (e.g., about 10 to the 9th ohm cm of 300 K) than those attained in standard SI GaAs (e.g., 10 to the 7th-10 to the 8th ohm cm).
    Keywords: SOLID-STATE PHYSICS
    Type: Journal of Applied Physics (ISSN 0021-8979); 62; 3482-348
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  • 5
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    New electron trap in p-type Czochralski silicon (1984)
    In:  Other Sources
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    Publication Date: 2011-08-18
    Description: A new electron trap (acceptor level) was discovered in p-type Czochralski (CZ) silicon by current transient spectroscopy. The behavior of this trap was found to be similar to that of the oxygen thermal donors; thus, 450 C annealing increases the trap concentration while high-temperature annealing (1100-1200 C) leads to the virtual elimination of the trap. The new trap is not observed in either float-zone or n-type CZ silicon. Its energy level depends on the group III doping element in the sample. These findings suggest that the trap is related to oxygen, and probably to the acceptor impurity as well.
    Keywords: SOLID-STATE PHYSICS
    Type: Applied Physics Letters (ISSN 0003-6951); 44; 42-44
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  • 6
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    Electron mobility in modulation-doped heterostructures (1984)
    In:  Other Sources
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    Publication Date: 2011-08-19
    Description: A model for electron mobility in a two-dimensional electron gas confined in a triangular well was developed. All major scattering processes (deformation potential and piezoelectric acoustic, polar optical, ionized impurity, and alloy disorder) were included, as well as intrasubband and intersubband scattering. The model is applied to two types of modulation-doped heterostructures, namely GaAs-GaAlAs and In(0.53)Ga(0.47)As-Al(0.52)In(0.48)As. In the former case, phonons and remote ionized impurities ultimately limit the mobility, whereas in the latter, alloy disorder is a predominant scattering process at low temperatures. The calculated mobilities are in very good agreement with recently reported experimental characteristics for both GaAs-Ga(1-x)Al(x)As and In(0.53)Ga(0.47)As-Al(0.52)In(0.48)As modulation-doped heterostructures.
    Keywords: SOLID-STATE PHYSICS
    Type: Physical Review B - Solid State, 3rd Series (ISSN 0556-2805); 30; 4571-458
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  • 7
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    Kinetics of thermal donor generation in silicon (1984)
    In:  Other Sources
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    Publication Date: 2011-08-19
    Description: The generation kinetics of thermal donors at 450 C in Czochralski-grown silicon was found to be altered by high-temperature preannealing (e.g., 1100 C for 30 min). Thus, when compared with as-grown Si, high-temperature preannealed material exhibits a smaller concentration of generated thermal donors and a faster thermal donor saturation. A unified mechanism of nucleation and oxygen diffusion-controlled growth (based on solid-state plate transformation theory) is proposed to account for generation kinetics of thermal donors at 450 C, in as-grown and high-temperature preannealed Czochralski silicon crystals. This mechanism is consistent with the main features of the models which have been proposed to explain the formation of oxygen thermal donors in silicon.
    Keywords: SOLID-STATE PHYSICS
    Type: Journal of Applied Physics (ISSN 0021-8979); 56; 2729-273
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  • 8
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    Determination of carrier concentration and compensation microprofiles in GaAs (1980)
    In:  Other Sources
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    Publication Date: 2011-08-17
    Description: Simultaneous microprofiling of semiconductor free carrier, donor, and acceptor concentrations was achieved for the first time from the absolute value of the free carrier absorption coefficient and its wavelength dependence determined by IR absorption in a scanning mode. Employing Ge- and Si-doped melt-grown GaAs, striking differences were found between the variations of electron concentration and those of ionized impurity concentrations. These results showed clearly that the electronic characteristics of this material are controlled by amphoteric doping and deviations from stoichiometry rather than by impurity segregation.
    Keywords: SOLID-STATE PHYSICS
    Type: Journal of Applied Physics; 51; Apr. 198
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  • 9
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    Electroepitaxy of multicomponent systems - Ternary and quarternary compounds (1980)
    In:  Other Sources
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    Publication Date: 2011-08-17
    Description: A theoretical model is presented which accounts for the electroepitaxial growth kinetics and composition of multicomponent compounds in terms of mass transport in the liquid and phase diagram relationships. The mass transport in the interface is dominated by electromigration in the absence of convection and by diffusion in the presence of convection. The composition of the solid is controlled by the Peltier effect at the growth interface and by the diffusion and mobility constants of the solute components and the growth velocity (current density). Thus, for a given solution composition, the composition of the solid can be varied by varying the current density. For a given current density the composition remains constant even in the case of relatively thick epitaxial layers. All aspects of the model were found to be in good agreement with the growth and composition characteristics of Ga/x-1/Al/x/As layers.
    Keywords: SOLID-STATE PHYSICS
    Type: Journal of Applied Physics; 51; Feb. 198
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  • 10
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    Electron mobility and free-carrier absorption in InP - Determination of the compensation ratio (1980)
    In:  Other Sources
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    Publication Date: 2011-08-18
    Keywords: SOLID-STATE PHYSICS
    Type: Journal of Applied Physics; 51; May 1980
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