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    MOCVD of GaAs in a horizontal reactor - Modeling and growth (1991)
    In:  Other Sources
    Details
    Publikationsdatum: 2011-08-19
    Beschreibung: A two-dimensional model for metalorganic chemical vapor deposition of GaAs in a horizontal reactor is presented. The model is characterized by the following parameters: reactor geometry and operating pressure, thermal boundary conditions, ratio of reactants, chemical reactions, total inlet gas flow rate, as well as molecular weights, thermal conductivities, heat capacities, viscosities, and binary diffusion coefficients of the gas-phase species. Film thickness profiles predicted by the model are compared with those of GaAs thin films grown in the modeled reactor. Results obtained show a good agreement between the predictions and data over the entire length of the deposition region for the low pressure and high flow rate run. Attention is also given to the reactor design and growth conditions.
    Schlagwort(e): SOLID-STATE PHYSICS
    Materialart: Journal of Crystal Growth (ISSN 0022-0248); 109; 241-245
    Format: text
    Standort Signatur Erwartet Verfügbarkeit
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    NASA TECHNICAL REPORTS
  • 2
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    Investigation of the asymmetric misfit dislocation morphology in epitaxial layers with the zinc-blende structure (1990)
    In:  Other Sources
    Details
    Publikationsdatum: 2019-07-12
    Beschreibung: The source of the asymmetry in the dislocation morphology exhibited in the epitaxial growth of compound semiconductors on (100) was investigated. A thickness wedge of p- and n-type GaAs(0.95)P(0.05) was grown on GaAs by metalorganic chemical vapor deposition, and the effect of misorientation on the resolved shear stress for each slip system was calculated and eliminated as the source of the asymmetry. Another potential source of asymmetry, the thickness gradient, was also eliminated. Results show that the substrate misorientation and the thickness gradient do not significantly contribute to the asymmetry and that the dominant contributor to the asymmetry of misfit dislocations in the (001) epitaxial interface can be attributed to the differences in the Peierls barriers between the two types of dilocations in GaAsP/GaAs.
    Schlagwort(e): SOLID-STATE PHYSICS
    Materialart: Journal of Applied Physics (ISSN 0021-8979); 68; 2739-274
    Format: text
    Standort Signatur Erwartet Verfügbarkeit
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    NASA TECHNICAL REPORTS
  • 3
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    The effect of frictional stress on the calculation of critical thickness in epitaxy (1990)
    In:  Other Sources
    Details
    Publikationsdatum: 2019-07-12
    Beschreibung: A model is developed for lattice-mismatched epitaxial layers, which makes it possible to calculate both the equilibrium critical thickness as well as the kinetic rate of misfit accommodations. The technique for calculating the equilibrium critical thickness is similar to that of Matthews (1966) in that it uses the force balance approach and the Volterra description of the dislocation line. For the kinetic component of misfit accommodation, the model uses a dynamic frictional force. A simple criterion is proposed for determining whether the generation of misfit dislocations will be controlled by the equilibrium or the kinetic factors.
    Schlagwort(e): SOLID-STATE PHYSICS
    Materialart: Journal of Applied Physics (ISSN 0021-8979); 68; 2801-280
    Format: text
    Standort Signatur Erwartet Verfügbarkeit
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    NASA TECHNICAL REPORTS
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