Publication Date:
2019-08-28
Description:
Specific contact resistances measured at elevated temperatures for Ni ohmic contacts to 6H-SiC were reported. The specific contact resistances were measured with the linear transmission line method at both room temperature and at 500 C and yielded values less than 5 x 10(exp -6) ohm sq cm at both temperatures. The trend shows a decreasing contact resistance at higher temperature. The annealed metal film is a nickel silicide with substantial mixing of C throughout the silicide layer.
Keywords:
SOLID-STATE PHYSICS
Type:
Journal of Applied Physics (ISSN 0021-8979); 77; 3; p. 1317-1319
Format:
text
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