ISSN:
0142-2421
Keywords:
Chemistry
;
Polymer and Materials Science
Source:
Wiley InterScience Backfile Collection 1832-2000
Topics:
Physics
Notes:
The composition-depth profile studies using x-ray photoelectron spectroscopy (XPS) are carried out for Mn thin films grown on GaAs(001) substrates at different substrate temperatures. The experimental results show that due to the interdiffusion and chemical reaction, an Mn-Ga-As mixed layer is formed between the Mn thin film and GaAs substrate. The thickness of the Mn-Ga-As mixed layer for the sample grown at 300 K is much thinner than that grown at 400 K. Because of the strong interdiffusion and chemical reaction, the overlayer on the GaAs substrate for the sample grown at 450 K is dominated by an Mn-Ga-As mixed layer, and no pure Mn area can be found on the top of the surface. The formation mechanism of γ-Mn grown on GaAs(001) surfaces is discussed.
Additional Material:
4 Ill.
Type of Medium:
Electronic Resource
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