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  • Polymer and Materials Science  (2)
  • k–ω turbulence model  (1)
  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Boundary layer meteorology 94 (2000), S. 5-21 
    ISSN: 1573-1472
    Keywords: Flow separation ; k–∈ turbulence model ; k–ω turbulence model ; Renormalization group (RNG) model ; Preferential dissipation modification (PDM) model ; Wall functions
    Source: Springer Online Journal Archives 1860-2000
    Topics: Geosciences , Physics
    Notes: Abstract Several two-equation turbulence models using isotropic eddy viscosity and wall functions are assessed by solution of the neutral atmospheric boundary layer over a flat surface and wind flow over two- and three-dimensional models and real terrain. Calculations are presented for wind flow over the Sirhowy Valley in Wales, an embankment along the Rhine in Germany and the Askervein Hill in Scotland. Comparisons of predictions with previous work, and laboratory and field data, show that the RNG-based k–∈ model gives the best agreement with respect to the flow profiles and length of the separated flow region. The results of this model are analyzed with a non-linear stress-strain relation to gauge the potential effect of turbulence anisotropy.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 23 (1995), S. 851-857 
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Because the chemical states of the elements in SrTiO3 thin film on Si are reduced by argon ion beam bombardment, it was impossible to sputter depth profile the chemical states of SrTiO3 thin film by argon ion beams. In this paper, it is reported that the undistorted chemical states of Ti and Si at the SrTiO3/Si interface can be determined with oxygen ion beams at the appropriate 70° angle of incidence, with which either metallic Ti is not oxidized or Ti in SrTiO3 is not reduced. Under the sputter depth profiling conditions, the chemical state of Ti at the SrTiO3/Si interface could be successfully characterized and the effects of post-annealing at high temperature on the chemical state of Ti were studied. A significant number of Ti atoms in the metallic state were observed at the SrTiO3/Si interface without any post-annealing but all of them were oxidized to the Ti4+ chemical state after 2 h post-annealing at the temperatures above 600°C under oxygen flow. The dielectric properties of SrTiO3 thin films on Si were well correlated to the oxidation state of Ti and the broadening of the interface SiO2 layer induced by post-annealing at high temperature.
    Additional Material: 9 Ill.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 0022-3832
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Physics
    Additional Material: 1 Ill.
    Type of Medium: Electronic Resource
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