Publication Date:
2011-08-24
Description:
After many years of promise as a high temperature semiconductor, silicon carbide (SiC) is finally emerging as a useful electronic material. Recent significant progress that has led to this emergence has been in the area of crystal growth and device fabrication technology. High quality of single-crystal SiC wafers, up to 25 mm in diameter, can now be produced routinely from boules grown by a high temperature (2700 K) sublimation process. Device fabrication processes, including chemical vapor deposition (CVD), in situ doping during CVD, reactive ion etching, oxidation, metallization, etc. have been used to fabricate p-n junction diodes and MOSFETs. The diode was operated to 870 K and the MOSFET to 770 K.
Keywords:
SOLID-STATE PHYSICS
Type:
In: Space nuclear power systems; Proceedings of the 8th Symposium, Albuquerque, NM, Jan. 6-10, 1991. Pt. 3 (A93-13751 03-20); p. 954-959.
Format:
text
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