ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • PHYSICS, ATOMIC, MOLECULAR, AND NUCLEAR  (10)
  • SOLID-STATE PHYSICS  (7)
  • toad urinary bladder  (3)
  • 1
    Electronic Resource
    Electronic Resource
    Springer
    The journal of membrane biology 67 (1982), S. 91-98 
    ISSN: 1432-1424
    Keywords: epithelial Na transport ; toad urinary bladder ; apical membrane ; ion selectivity ; Na channels
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Chemistry and Pharmacology
    Notes: Summary The ion selectivity of the apical membrane Na channel in the toad urinary bladder was investigated. The electrical potential difference and resistance across the basal-lateral membrane were reduced using high concentrations of KCl in the serosal bathing medium, and gradients for various ions were imposed across the apical membrane by altering the composition of the mucosal bathing medium. Ion fluxes through the channel were measured as the transepithelial current inhibited by amiloride, a specific blocker of the channel's Na conductance. The selectivity sequence for alkali metal cations was H〉Li〉Na≫K. K, permeability was barely detectable; the selectivity for Na over K was about 1000:1. Ammonium, hydroxyl ammonium and hydrazinium ions were, like K, virtually impermeant. The results suggest that the size of the unhydrated ion is an important factor in determining permeability in this channel.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 2
    Electronic Resource
    Electronic Resource
    Springer
    The journal of membrane biology 80 (1984), S. 153-165 
    ISSN: 1432-1424
    Keywords: toad urinary bladder ; epithelial Na channels ; amiloride ; voltage-dependent inhibition
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Chemistry and Pharmacology
    Notes: Summary Inhibition of the Na conductance of the apical membrane of the toad urinary bladder by amiloride, alkali cations and protons was voltage dependent. Bladders were bathed with a high K-sucrose serosal medium to reduce series basal-lateral resistance and potential difference. Transepithelial current-voltage relationships were measured over a voltage range of ±200 mV with a voltage ramp of frequency 0.5 to 1 Hz. Na channelI–V relationships were obtained by subtraction of currents measured in the presence of maximal doses of amiloride (10 to 20 μm). With submaximal doses of amiloride (0.05 to 0.5 μm), the degree of inhibition of the Na channel current (I Na) increased as the mucosal potential was made more positive. The data can be reasonably well explained by assuming that amiloride blocks Na transport by binding to a site which senses ∼12% of the transmembrane voltage difference.I Na was reduced in a qualitatively similar voltage-dependent manner by mucosal K, Rb, Cs and Tl (∼100mm) and by mucosal H (∼1mm). Block by these cations cannot be explained in terms of interactions with a single membrane-voltage-sensing site; a model in which there are two or more blocking sites in series provides a better description of the data. On the other hand, amiloride block was reduced competitively by mucosal Na and K, suggesting that occupation of the channel by one cation excludes occupancy by the others. ADH and ouabain also reduce the apparent affinity of amiloride for its blocking site. Thus, intracellular Na may also compete with amiloride for occupancy of the channel.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 3
    Electronic Resource
    Electronic Resource
    Springer
    The journal of membrane biology 92 (1986), S. 217-226 
    ISSN: 1432-1424
    Keywords: toad urinary bladder ; K channels ; ADH ; carbachol ; Li ; quinidine
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Chemistry and Pharmacology
    Notes: Summary The conductance of the apical membrane of the toad urinary bladder was studied under voltage-clamp conditions at hyperpolarizing potentials (mucosa negative to serosa). The serosal medium contained high KCl concentrations to reduce the voltage and electrical resistance across the basal-lateral membrane, and the mucosal solution was Na free, or contained amiloride, to eliminate the conductance of the apical Na channels. As the mucosal potential (V m) was made more negative the slope conductance of the epithelium increased, reaching a maximum at conductance of the epithelium increased, reaching a maximum atV m=−100 mV. This rectifying conductance activated with a time constant of 2 msec whenV m was changed abruptly from 0 to −100 mV, and remained elevated for at least 10 min, although some decrease of current was observed. ReturningV m to+100 mV deactivated the conductance within 1 msec. Ion substitution experiments showed that the rectified current was carried mostly by cations moving from cell to mucosa. Measurement of K flux showed that the current could be accounted for by net movement of K across the apical membrane, implying a voltage-dependent conductance to K (G K). Mucosal addition of the K channel blockers TEA and Cs had no effect onG K, while 29mm Ba diminished it slightly. Mucosal Mg (29mm) also reducedG K, while Ca (29mm) stimulated it.G K was blocked by lowering the mucosal pH with an apparent pK1 of 4.5. Quinidine (0.5mm in the serosal bath) reducedG K by 80%.G K was stimulated by ADH (20 mU/ml), 8-Br-cAMP (1mm), carbachol (100 μm), aldosterone (5×10−7 m for 18 hr), intracellular Li and extracellular CO2.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 4
    Publication Date: 2011-08-24
    Description: After many years of promise as a high temperature semiconductor, silicon carbide (SiC) is finally emerging as a useful electronic material. Recent significant progress that has led to this emergence has been in the area of crystal growth and device fabrication technology. High quality of single-crystal SiC wafers, up to 25 mm in diameter, can now be produced routinely from boules grown by a high temperature (2700 K) sublimation process. Device fabrication processes, including chemical vapor deposition (CVD), in situ doping during CVD, reactive ion etching, oxidation, metallization, etc. have been used to fabricate p-n junction diodes and MOSFETs. The diode was operated to 870 K and the MOSFET to 770 K.
    Keywords: SOLID-STATE PHYSICS
    Type: In: Space nuclear power systems; Proceedings of the 8th Symposium, Albuquerque, NM, Jan. 6-10, 1991. Pt. 3 (A93-13751 03-20); p. 954-959.
    Format: text
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 5
    Publication Date: 2013-08-31
    Description: In recent years, the aerospace propulsion and space power communities have expressed a growing need for electronic devices that are capable of sustained high temperature operation. Applications for high temperature electronic devices include development instrumentation within engines, engine control, and condition monitoring systems, and power conditioning and control systems for space platforms and satellites. Other earth-based applications include deep-well drilling instrumentation, nuclear reactor instrumentation and control, and automotive sensors. To meet the needs of these applications, the High Temperature Electronics Program at the Lewis Research Center is developing silicon carbide (SiC) as a high temperature semiconductor material. Research is focussed on developing the crystal growth, characterization, and device fabrication technologies necessary to produce a family of silicon carbide electronic devices and integrated sensors. The progress made in developing silicon carbide is presented, and the challenges that lie ahead are discussed.
    Keywords: SOLID-STATE PHYSICS
    Type: NASA, Washington, Technology 2000, Volume 2; p 171-178
    Format: application/pdf
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 6
    Publication Date: 2013-08-31
    Description: Viewgraphs on silicon carbide semiconductor technology and its potential for enabling electronic devices to function in high temperature and high radiation environments are presented. Topics covered include silicon carbide; sublimation growth of 6H-SiC boules; SiC chemical vapor deposition reaction system; 6H silicon carbide p-n junction diode; silicon carbide MOSFET; and silicon carbide JFET radiation response.
    Keywords: SOLID-STATE PHYSICS
    Type: Nuclear Propulsion Technical Interchange Meeting, Volume 1; p 445-452
    Format: application/pdf
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 7
    Publication Date: 2019-05-30
    Description: Radiative lifetimes of strongest vacuum UV MULTIPLETS of B I, B II, C I, C II, N I and N II measured by phase shift method
    Keywords: PHYSICS, ATOMIC, MOLECULAR, AND NUCLEAR
    Format: text
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 8
    Publication Date: 2019-05-30
    Description: Dipole integrals for nonmetal resonance transition probabilities
    Keywords: PHYSICS, ATOMIC, MOLECULAR, AND NUCLEAR
    Type: NASA-CR-78378
    Format: application/pdf
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 9
    Publication Date: 2019-05-30
    Description: Resonance transition probabilities in intermediate coupling for neutral nonmetals
    Keywords: PHYSICS, ATOMIC, MOLECULAR, AND NUCLEAR
    Type: NASA-CR-78374
    Format: application/pdf
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 10
    Publication Date: 2019-06-27
    Description: The energy difference between the 2S(sub 1/2) levels in the O-16(7+) ion has been determined by means of a Stark-quenching experiment to be 2215.6 plus or minus 7.5 GHz. The uncertainty is based on measured quantities only. This result is shown to be in agreement with the results of similar measurements made by other authors.
    Keywords: PHYSICS, ATOMIC, MOLECULAR, AND NUCLEAR
    Type: Physical Review Letters; 28; June 19
    Format: text
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...