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  • PHYSICS, ATOMIC, MOLECULAR, AND NUCLEAR  (10)
  • SOLID-STATE PHYSICS  (7)
  • amiloride  (3)
  • 1
    Electronic Resource
    Electronic Resource
    Interactions of amiloride and other blocking cations with the apical Na channel in the toad urinary bladder (1985)
    Springer
    The journal of membrane biology 87 (1985), S. 191-199 
    Details
    ISSN: 1432-1424
    Keywords: amiloride ; Na channels ; epithelial Na transport ; voltage-dependent block
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Chemistry and Pharmacology
    Notes: Summary A simple model of the action of amiloride to block apical Na channels in the toad urinary bladder was tested. According to the model, the positively charged form of the drug binds to a site in the lumen of the channel within the electric field of the membrane. In agreement with the predictions of the model: (1) The voltage dependence of amiloride block was consistent with the assumption of a single amiloride binding site, at which about 15% of the transmembrane voltage is sensed, over a voltage range of ±160 mV. (2) The time course of the development of voltage dependence was consistent with that predicted from the rate constants for amiloride binding previously determined. (3) The ability of organic cations to mimic the action of amiloride showed a size dependence implying a restriction of access to the binding site, with an effective diameter of about 5 angstroms. In a fourth test, divalent cations (Ca, Mg, Ba and Sr) were found to block Na channels with a complex voltage dependence, suggesting that these ions interact with two or more sites. at least one of which may be within the lumen of the pore.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01871218
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Voltage-dependent block by amiloride and other monovalent cations of apical Na channels in the toad urinary bladder (1984)
    Springer
    The journal of membrane biology 80 (1984), S. 153-165 
    Details
    ISSN: 1432-1424
    Keywords: toad urinary bladder ; epithelial Na channels ; amiloride ; voltage-dependent inhibition
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Chemistry and Pharmacology
    Notes: Summary Inhibition of the Na conductance of the apical membrane of the toad urinary bladder by amiloride, alkali cations and protons was voltage dependent. Bladders were bathed with a high K-sucrose serosal medium to reduce series basal-lateral resistance and potential difference. Transepithelial current-voltage relationships were measured over a voltage range of ±200 mV with a voltage ramp of frequency 0.5 to 1 Hz. Na channelI–V relationships were obtained by subtraction of currents measured in the presence of maximal doses of amiloride (10 to 20 μm). With submaximal doses of amiloride (0.05 to 0.5 μm), the degree of inhibition of the Na channel current (I Na) increased as the mucosal potential was made more positive. The data can be reasonably well explained by assuming that amiloride blocks Na transport by binding to a site which senses ∼12% of the transmembrane voltage difference.I Na was reduced in a qualitatively similar voltage-dependent manner by mucosal K, Rb, Cs and Tl (∼100mm) and by mucosal H (∼1mm). Block by these cations cannot be explained in terms of interactions with a single membrane-voltage-sensing site; a model in which there are two or more blocking sites in series provides a better description of the data. On the other hand, amiloride block was reduced competitively by mucosal Na and K, suggesting that occupation of the channel by one cation excludes occupancy by the others. ADH and ouabain also reduce the apparent affinity of amiloride for its blocking site. Thus, intracellular Na may also compete with amiloride for occupancy of the channel.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01868771
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  • 3
    Electronic Resource
    Electronic Resource
    Regulation of principal cell pH by Na/H exchange in rabbit cortical collecting tubule (1992)
    Springer
    The journal of membrane biology 125 (1992), S. 13-24 
    Details
    ISSN: 1432-1424
    Keywords: pH-sensitive dye ; BCECF ; ouabain ; amiloride ; Na transport ; feedback regulation
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Chemistry and Pharmacology
    Notes: Summary Changes in intracellular pH (pH i ) were measured using the pH indicator, BCECF, in principal cells from split opened cortical collecting tubules (CCTs) derived from rabbits maintained on a normal diet. This monolayer preparation has the advantage of allowing us to visualize the morphological differences in the two major cell types in this nephron segment under transmitted light. The visual identification of the cell types was verified using emission measurements taken from single principal and intercalated cells in the opened tubule which had been exposed to fluorescein isothiocyanate (FITC)-labeled peanut lectin. We confirmed the existence of an amiloride-sensitive Na/H exchange process activated during intracellular acidosis in principal cells. In addition, the exchanger was active under basal conditions and over a wide range of pH i . Because the exchanger was active under basal conditions we tested the hypothesis that changes in intracellular Na (Na i ) would alter pH i in a predictable way. Maneuvers designed to alter Na i were without significant effects within a 10-min time frame. Specifically, addition of 100 μm ouabain to increase Na i or exposure of the tubules to 10−5 m amiloride to decrease luminal Na entry and reduce Na i did not have an effect on pH i . In some experiments we did observe however, after a 30-min exposure to ouabain, a small decrease in pH i . These results suggest that Na/H exchange is a major regulator of pH i in principal cells. However, regulation of Na transport by changes in pH i in principal cells of rabbit CCT via the activity of a Na/H exchanger do not seem to contribute to the feedback control of Na transport.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00235794
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  • 4
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    Silicon carbide, a semiconductor for space power electronics (1991)
    In:  Other Sources
    Details
    Publication Date: 2011-08-24
    Description: After many years of promise as a high temperature semiconductor, silicon carbide (SiC) is finally emerging as a useful electronic material. Recent significant progress that has led to this emergence has been in the area of crystal growth and device fabrication technology. High quality of single-crystal SiC wafers, up to 25 mm in diameter, can now be produced routinely from boules grown by a high temperature (2700 K) sublimation process. Device fabrication processes, including chemical vapor deposition (CVD), in situ doping during CVD, reactive ion etching, oxidation, metallization, etc. have been used to fabricate p-n junction diodes and MOSFETs. The diode was operated to 870 K and the MOSFET to 770 K.
    Keywords: SOLID-STATE PHYSICS
    Type: In: Space nuclear power systems; Proceedings of the 8th Symposium, Albuquerque, NM, Jan. 6-10, 1991. Pt. 3 (A93-13751 03-20); p. 954-959.
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  • 5
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    Silicon carbide, an emerging high temperature semiconductor (1991)
    In:  CASI
    Details
    Publication Date: 2013-08-31
    Description: In recent years, the aerospace propulsion and space power communities have expressed a growing need for electronic devices that are capable of sustained high temperature operation. Applications for high temperature electronic devices include development instrumentation within engines, engine control, and condition monitoring systems, and power conditioning and control systems for space platforms and satellites. Other earth-based applications include deep-well drilling instrumentation, nuclear reactor instrumentation and control, and automotive sensors. To meet the needs of these applications, the High Temperature Electronics Program at the Lewis Research Center is developing silicon carbide (SiC) as a high temperature semiconductor material. Research is focussed on developing the crystal growth, characterization, and device fabrication technologies necessary to produce a family of silicon carbide electronic devices and integrated sensors. The progress made in developing silicon carbide is presented, and the challenges that lie ahead are discussed.
    Keywords: SOLID-STATE PHYSICS
    Type: NASA, Washington, Technology 2000, Volume 2; p 171-178
    Format: application/pdf
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  • 6
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    Silicon carbide semiconductor technology for high temperature and radiation environments (1993)
    In:  CASI
    Details
    Publication Date: 2013-08-31
    Description: Viewgraphs on silicon carbide semiconductor technology and its potential for enabling electronic devices to function in high temperature and high radiation environments are presented. Topics covered include silicon carbide; sublimation growth of 6H-SiC boules; SiC chemical vapor deposition reaction system; 6H silicon carbide p-n junction diode; silicon carbide MOSFET; and silicon carbide JFET radiation response.
    Keywords: SOLID-STATE PHYSICS
    Type: Nuclear Propulsion Technical Interchange Meeting, Volume 1; p 445-452
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  • 7
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    Radiative lifetimes of uv multiplets in boron, carbon, and nitrogen. (1966)
    In:  Other Sources
    Details
    Publication Date: 2019-05-30
    Description: Radiative lifetimes of strongest vacuum UV MULTIPLETS of B I, B II, C I, C II, N I and N II measured by phase shift method
    Keywords: PHYSICS, ATOMIC, MOLECULAR, AND NUCLEAR
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  • 8
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    Dipole Transition Integrals for Non-metal Resonance Transitions (1966)
    In:  CASI
    Details
    Publication Date: 2019-05-30
    Description: Dipole integrals for nonmetal resonance transition probabilities
    Keywords: PHYSICS, ATOMIC, MOLECULAR, AND NUCLEAR
    Type: NASA-CR-78378
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  • 9
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    Resonance Transition Probabilities in Intermediate Coupling for Some Neutral Non Metals (1964)
    In:  CASI
    Details
    Publication Date: 2019-05-30
    Description: Resonance transition probabilities in intermediate coupling for neutral nonmetals
    Keywords: PHYSICS, ATOMIC, MOLECULAR, AND NUCLEAR
    Type: NASA-CR-78374
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  • 10
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    Measurement of the Lamb shift in the O-16/7+/ ion. (1972)
    In:  Other Sources
    Details
    Publication Date: 2019-06-27
    Description: The energy difference between the 2S(sub 1/2) levels in the O-16(7+) ion has been determined by means of a Stark-quenching experiment to be 2215.6 plus or minus 7.5 GHz. The uncertainty is based on measured quantities only. This result is shown to be in agreement with the results of similar measurements made by other authors.
    Keywords: PHYSICS, ATOMIC, MOLECULAR, AND NUCLEAR
    Type: Physical Review Letters; 28; June 19
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