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  • PACS. 13.60.Le Meson production – 25.20.Lj Photoproduction reactions  (2)
  • SOLID-STATE PHYSICS  (2)
  • 1
    Electronic Resource
    Electronic Resource
    Double- π0 photoproduction from the deuteron (2000)
    Springer
    The European physical journal 9 (2000), S. 1-4 
    Details
    ISSN: 1434-601X
    Keywords: PACS. 13.60.Le Meson production – 25.20.Lj Photoproduction reactions
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract: The photoproduction of two neutral pions from the deuteron has been studied for incident photon energies from 200 MeV to 820 MeV with the TAPS spectrometer at MAMI (Mainz Microtron). The total cross-section was determined and used to deduce the cross-section from the neutron. Due to the good statistical quality of the data Dalitz plots for the three particles in the exit channel (π0π0 N) could be constructed. The invariant mass distributions derived from them are presented in this paper. They indicate that the important reaction mechanism in the second resonance region is a sequential decay pattern involving the population of the Δ(1232)-resonance as an intermediate state.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s100500070047
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    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Photoproduction of neutral pion pairs from the proton (2000)
    Springer
    The European physical journal 9 (2000), S. 5-8 
    Details
    ISSN: 1434-601X
    Keywords: PACS. 13.60.Le Meson production – 25.20.Lj Photoproduction reactions
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract: Double neutral pion photoproduction from the proton has been measured at MAMI for photon energies between threshold and 820 MeV. The reaction was identified by an invariant mass and missing mass analysis. From threshold up to 370 MeV the total cross-section does not exceed 30 nb. For higher energies it shows a smooth rise until it reaches a maximum of about 10 μb at E γ = 740 MeV. Dalitz plots of m 2(π0π0) versus m 2(p,π0) for seven bins of incident photon energy have been analysed. For E γ 〉 610 MeV, a strong contribution of a sequential decay is observed with the Δ(1232)-resonance as intermediate state. A comparison to model calculations shows that these sequential decays presumably originate from the D 13(1520) and also the P 11(1440)-resonance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s100500070048
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    Paper (German National Licenses)
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  • 3
    facet.materialart.
    Unknown
    Lifetimes in Si CVD-epitaxial and other layers determined by spectral LBIC (1984)
    In:  Other Sources
    Details
    Publication Date: 2019-07-13
    Description: In an effort to evaluate the minority carrier lifetimes in CVD-epitaxially grown layers in their dependence on the CVD process variables, the absolute spectral LBIC method was found to be the only available method capable of yielding both lifetime and surface recombination velocity in layers, independent of the resistivity of this layer or that of the substrate, as long as they are separated by a pn-junction. With this method, it was not only possible to determine the minority carrier lifetimes in as-grown epi-layers, but to observe their changes through the device fabrication processes. In addition, it was possible for the first time to determine the lifetimes in the alloy-regrowth p(+) layers of base high/low junction structures.
    Keywords: SOLID-STATE PHYSICS
    Type: Photovoltaic Specialists Conference; May 01, 1984 - May 04, 1984; Kissimmee, FL
    Format: text
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    NASA TECHNICAL REPORTS
  • 4
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    Measurement of minority carrier lifetimes and surface recombination velocities in solar cells (1987)
    In:  Other Sources
    Details
    Publication Date: 2019-07-13
    Description: A generic comparison has been carried out of all methods for recombination parameter determination that are based on measurement of a current and/or voltage in either steady-state, transient, or frequency-dependent approaches. The theoretical background for the time-dependent methods has been extended from prior work to include drift fields and be applicable to compound (multilayered) regions. The key findings were: (1) all methods have essentially the same limitations to determination of only the dominant recombination parameters; (2) open-circuit measurements have more sensitivity to the recombination parameters than short circuit measurements, but they present much more difficulty in eliminating spurious effects; (3) transient and frequency-dependent methods have exactly the same expressions for the relaxation constants and the breakpoint frequencies; and (4) in compound regions there exists only one set of relaxation constants for all the coupled layers. These constants include all relevant parameters of these layers. It is thus difficult to separate these parameters in time- or frequency-domain measurements. ASLBIC seems still to be the most suitable method for determination of emitter parameters.
    Keywords: SOLID-STATE PHYSICS
    Type: IEEE Photovoltaic Specialists Conference; May 04, 1987 - May 08, 1987; New Orleans, LA; United States
    Format: text
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    NASA TECHNICAL REPORTS
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