ISSN:
1432-0630
Keywords:
PACS: 81.15; 78.30; 68.55
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
1-x-y GexCy have been grown on Si(100) substrates by rapid thermal chemical vapor deposition (RTCVD) using C2H4 as C source. The composition and microstructure of Si1-x-yGexCy films were characterized by Auger electron spectroscopy, Raman spectra and Fourier-transform infrared spectroscopy. The results show that lower temperature and higher SiH4/C2H4 flow ratio are helpful in forming the substitutional C and improving the crystal quality. A possible mechanism for C incorporation in Si1-x-yGexCy layers grown by RTCVD using C2H4 is proposed.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/s003390050923
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