ISSN:
1432-0630
Keywords:
PACS: 61.50.-f; 72.20.-I; 73.20.Hb; 61.16.Bg; 73.50.Gr
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract. Electrical-current-induced Joule heating was applied to crystallization of 60-nm-thick amorphous silicon films formed on glass substrates. 3-μs-pulsed voltages were applied to silicon films connected with a capacitance in parallel. Coincident irradiation with 28-ns-pulsed excimer laser melted films partially and reduced its resistance. Complete melting for 12 μs and a low cooling rate at 1.1×108 K/s were achieved by Joule heating from electrical energy accumulated in the capacitance at 0.22 μF. For 7.4×1017 cm-3 phosphorus-doped films, analysis of temperature change in the electrical conductivity gave that the density of defect states localized at grain boundaries was 1.5×1012 cm-2. Formation of 3.5-μm-long crystalline grains was observed by transmission electron micrograph. Preferential crystalline orientation was (110).
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/s003390050016
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