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  • NONMETALLIC MATERIALS  (5)
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  • 1
    Publication Date: 2011-08-19
    Description: The effect of thermal excursion and thermal cycling on the oxidation stability of chemical vapor-deposited (CVD) SiC and Si3N4 was studied at 1350 C. Thermal cycling alone produced no noticeable change in oxidation kinetics. However, TEM showed that oxide scales grown in cycles consist of alternating layers of SiO2 and Si2N2O. When the oxidation of CVD SiC or Si3N4 at 1350 C was interrupted with a 1.5-h annealing in Ar at 1500 C, the kinetics of reoxidation at 1350 C were found to be drastically increased. The SiC and Si3N4 then oxidized essentially at the same rate, which is over 50 times the preannealing rate, and comparable to the expected oxidation rate of these materials at 1500 C.
    Keywords: NONMETALLIC MATERIALS
    Type: Electrochemical Society, Journal (ISSN 0013-4651); 138; L53-L56
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  • 2
    Publication Date: 2011-08-19
    Description: Microstructural and energy dispersive spectrometry evidence is produced, from transmission electron microscopy, to show that a silicon oxynitride inner layer is produced by the oxidation of silicon nitride in dry oxygen at 1350 C as proposed by Tressler et al. (1989). However, details of the microstructures at the oxide/nitride interface do not agree entirely with the rest of the Tressler model for the oxidation of Si3N4.
    Keywords: NONMETALLIC MATERIALS
    Type: Electrochemical Society, Journal (ISSN 0013-4651); 138; L51-L53
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  • 3
    Publication Date: 2019-08-28
    Description: The results of two-step oxidation experiments on chemically-vapor-deposited Si3N4 and SiC at 1350 C show that a correlation exists between the presence of a Si2N2O interphase and the strong oxidation resistance of Si3N4. During normal oxidation, k sub p for SiC was 15 times higher than that for Si3N4, and the oxide scale on Si3N4 was found by SEM and TEM to contain a prominent Si2N2O inner layer. However, when oxidized samples are annealed in Ar for 1.5 h at 1500 C and reoxidized at 1350 C as before, three things happen: the oxidation k sub p increases over 55-fold for Si3N4, and 3.5-fold for SiC; the Si3N4 and SiC oxidize with nearly equal k sub p's; and, most significantly, the oxide scale on Si3N4 is found to be lacking an inner Si2N2O layer. The implications of this correlation for the competing models of Si3N4 oxidation are discussed.
    Keywords: NONMETALLIC MATERIALS
    Type: American Ceramic Society, Journal (ISSN 0002-7820); 75; 11; p. 2995-3000.
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  • 4
    Publication Date: 2019-08-15
    Description: A suitable interphase material for non-oxide ceramic-matrix composites must be resistant to oxidation. This means it must exhibit a slow rate of oxidation, and its oxidation product must be such as to ensure that the system survives oxidation when it does occur. Because the current benchmark interphase materials, carbon and boron nitride, lack these qualities, a porous fiber coating was developed to satisfy both the mechanical and oxidative requirements of an interphase for the SiC/SiC and SiC/Si2N4 composites that are of interest to NASA. This report presents the interphase microstructure achieved and the resulting characteristics of fiber push-out from a matrix of reaction-bonded silicon nitride (RBSN), both as-fabricated and after substantial annealing and oxidation treatments.
    Keywords: NONMETALLIC MATERIALS
    Type: NASA-CR-198425 , NAS 1.26:198425 , E-10013 , NIPS-95-06250
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  • 5
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    In:  Other Sources
    Publication Date: 2019-07-13
    Description: Severe difficulties are encountered in the preparation of oxidized Si3N4 specimens for XTEM transmission electromicroscopic inspection, in virtue of the extreme difference between Si3N4 and SiO2 mechanical properties. Attention is presently given to a preparation method in which an overlayer of the nitride is always occluded; this protects the oxide through most of the thinning that specimen preparation entails. An XTEM image of the oxide/nitride interface is presented.
    Keywords: NONMETALLIC MATERIALS
    Type: Annual Meeting of the Electron Microscopy Society of America; Aug 04, 1991 - Aug 09, 1991; San Jose, CA; United States
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