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  • SOLID-STATE PHYSICS  (9)
  • NONMETALLIC MATERIALS  (6)
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  • 1
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    Optical dispersion relations for 'diamondlike' carbon films (1989)
    In:  Other Sources
    Details
    Publikationsdatum: 2011-08-24
    Beschreibung: Ellipsometric measurements on plasma deposited diamondlike amorphous carbon (a-C:H) films were taken in the visible, (E = 1.75 to 3.5 eV). The films were deposited on Si and their properties were varied using high temperature (up to 750 C) anneals. The real (n) and imaginary (k) parts of the complex index of refraction N were obtained simultaneously. Following the theory of Forouhi and Bloomer, a least squares fit was used to find the dispersion relations n(E) and k(E). Reasonably good fits were obtained, showing that the theory can be used for a-C:H films. Moreover, the value of the energy gap (Eg) obtained in this way was compared to the Eg value using conventional Tauc plots and reasonably good agreement was obtained.
    Schlagwort(e): SOLID-STATE PHYSICS
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  • 2
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    Mechanical strength and tribological behavior of ion-beam-deposited boron nitride films on non-metallic substrates (1987)
    In:  Other Sources
    Details
    Publikationsdatum: 2011-08-19
    Beschreibung: An investigation was conducted to examine the mechanical strength and tribological properties of boron nitride (BN) films ion-beam deposited on silicon (Si), fused silica (SiO2), gallium arsenide (GaAs), and indium phosphide (InP) substrates in sliding contact with a diamond pin under a load. The results of the investigation indicate that BN films on nonmetallic substrates, like metal films on metallic substrates, deform elastically and plastically in the interfacial region when in contact with a diamond pin. However, unlike metal films and substrates, BN films on nonmetallic substrates can fracture when they are critically loaded. Not only does the yield pressure (hardness) of Si and SiO2 substrates increase by a factor of 2 in the presence of a BN film, but the critical load needed to fracture increases as well. The presence of films on the brittle substrates can arrest crack formation. The BN film reduces adhesion and friction in the sliding contact. BN adheres to Si and SiO2 and forms a good quality film, while it adheres poorly to GaAs and InP. The interfacial adhesive strengths were 1 GPa for a BN film on Si and appreciably higher than 1 GPa for a BN film on SiO2.
    Schlagwort(e): NONMETALLIC MATERIALS
    Materialart: Surface and Coatings Technology (ISSN 0257-8972); 33; 221-233
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  • 3
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    Boron nitride - Composition, optical properties, and mechanical behavior (1987)
    In:  Other Sources
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    Publikationsdatum: 2011-08-19
    Beschreibung: A low energy ion beam deposition technique was used to grow boron nitride films on quartz, germanium, silicon, gallium arsenide, and indium phosphate. The film structure was amorphous with evidence of a hexagonal phase. The peak boron concentration was 82 at. percent. The carbon and oxygen impurities were in the 5 to 8 at. percent range. Boron-nitrogen and boron-boron bonds were revealed by X-ray photoelectron spectroscopy. The index of refraction varied from 1.65 to 1.67 for films deposited on III-V compound semiconductors. The coefficient of friction for boron nitride in sliding contact with diamond was less than 0.1. The substrate was silicon.
    Schlagwort(e): NONMETALLIC MATERIALS
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  • 4
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    Plasma deposition of amorphous hydrogenated carbon films on III-V semiconductors (1988)
    In:  Other Sources
    Details
    Publikationsdatum: 2011-08-19
    Beschreibung: Amorphous hydrogenated carbon films were grown on GaAs, InP and fused silica substrates using plasmas generated from hydrocarbon gases. Methane and n-butane sources were utilized. The effects of flow rate and power density on film growth were investigated. Carbon was the major constituent in the films. The degree of asymmetry at the carbon-semiconductor interface was approximately independent of the power density. Different H-C bonding configurations were detected by the technique of secondary-ion mass spectrometry. Band gaps up to 3 eV were obtained from optical absorption studies. Breakdown strengths as high as 600 MV/m were measured.
    Schlagwort(e): SOLID-STATE PHYSICS
    Materialart: Thin Solid Films (ISSN 0040-6090); 157; 97-104
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  • 5
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    Temperature stability of Al(x)Ga(1-x)As (x = 0-1) thermal oxide masks for selective-area epitaxy (1988)
    In:  Other Sources
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    Publikationsdatum: 2011-08-19
    Beschreibung: The use of thermal oxides of Al(x)Ga(1-x)As (x = 0-1) as masking materials for selective-area epitaxy by a organometallic chemical-vapor deposition has been investigated. It was found that the thermal oxide of GaAs is only applicable for low growth temperatures (less than or equal to 600 C), and the addition of aluminum significantly improves the thermal stability of the oxide. The oxide of Al(0.4)Ga(0.6)As is suitable for high-temperature deposition, but there are criteria for the thickness and oxidation temperature. Thin layers of AlAs oxidized at 475 C are excellent masks and allow precise thickness control. Promising results of selective-area deposition using these aluminum oxide masks have been obtained. High-quality single crystal grew in mask openings uniformly surrounded by dense and fine-grain polycrystalline deposits, producing a planar duplication of the original pattern.
    Schlagwort(e): SOLID-STATE PHYSICS
    Materialart: Journal of Applied Physics (ISSN 0021-8979); 64; 922-925
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  • 6
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    Rapid thermal annealing of Amorphous Hydrogenated Carbon (a-C:H) films (1987)
    In:  CASI
    Details
    Publikationsdatum: 2019-06-28
    Beschreibung: Amorphous hydrogenated carbon (a-C:H) films were deposited on silicon and quartz substrates by a 30 kHz plasma discharge technique using methane. Rapid thermal processing of the films was accomplished in nitrogen gas using tungsten halogen light. The rapid thermal processing was done at several fixed temperatures (up to 600 C), as a function of time (up to 1800 sec). The films were characterized by optical absorption and by ellipsometry in the near UV and the visible. The bandgap, estimated from extrapolation of the linear part of a Tauc plot, decreases both with the annealing temperature and the annealing time, with the temperature dependence being the dominating factor. The density of states parameter increases up to 25 percent and the refractive index changes up to 20 percent with temperature increase. Possible explanations of the mechanisms involved in these processes are discussed.
    Schlagwort(e): SOLID-STATE PHYSICS
    Materialart: NASA-TM-89859 , E-3519 , NAS 1.15:89859
    Format: application/pdf
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  • 7
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    Mechanical strength and tribological behavior of ion-beam deposited boron nitride films on non-metallic substrates (1987)
    In:  CASI
    Details
    Publikationsdatum: 2019-06-28
    Beschreibung: An investigation was conducted to examine the mechanical strength and tribological properties of boron nitride (BN) films ion-beam deposited on silicon (Si), fused silica (SiO2), gallium arsenide (GaAs), and indium phosphide (InP) substrates in sliding contact with a diamond pin under a load. The results of the investigation indicate that BN films on nonmetallic substrates, like metal films on metallic substrates, deform elastically and plastically in the interfacial region when in contact with a diamond pin. However, unlike metal films and substrates, BN films on nonmetallic substrates can fracture when they are critically loaded. Not only does the yield pressure (hardness) of Si and SiO2 substrates increase by a factor of 2 in the presence of a BN film, but the critical load needed to fracture increases as well. The presence of films on the brittle substrates can arrest crack formation. The BN film reduces adhesion and friction in the sliding contact. BN adheres to Si and SiO2 and forms a good quality film, while it adheres poorly to GaAs and InP. The interfacial adhesive strengths were 1 GPa for a BN film on Si and appreciably higher than 1 GPa for a BN film on SiO2.
    Schlagwort(e): NONMETALLIC MATERIALS
    Materialart: NASA-TM-89818 , E-3439 , NAS 1.15:89818
    Format: application/pdf
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  • 8
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    Boron nitride: Composition, optical properties and mechanical behavior (1987)
    In:  CASI
    Details
    Publikationsdatum: 2019-06-28
    Beschreibung: A low energy ion beam deposition technique was used to grow boron nitride films on quartz, germanium, silicon, gallium arsenide, and indium phosphate. The film structure was amorphous with evidence of a hexagonal phase. The peak boron concentration was 82 at %. The carbon and oxygen impurities were in the 5 to 8 at % range. Boron-nitrogen and boron-boron bonds were revealed by X-ray photoelectron spectroscopy. The index of refraction varied from 1.65 to 1.67 for films deposited on III-V compound semiconductors. The coefficient of friction for boron nitride in sliding contact with diamond was less than 0.1. The substrate was silicon.
    Schlagwort(e): SOLID-STATE PHYSICS
    Materialart: NASA-TM-89849 , E-3514 , NAS 1.15:89849
    Format: application/pdf
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  • 9
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    AlGaAs growth by OMCVD using an excimer laser (1986)
    In:  CASI
    Details
    Publikationsdatum: 2019-06-28
    Beschreibung: AlGaAs has been grown on GaAs by laser assisted OMCVD using an excimer laser, wavelength 193 nm, and a Cambridge OMCVD reactor. Films were grown at temperatures of 450 and 500 C with the laser beam parallel to the surface and impinging onto the surface at 15 deg from parallel. The samples were heated by RF coils while the laser beam was perpendicular to the gas flow. Typical gas flow parameters are 12 slm of H2, 15 sccm of Ga(CH3)3, 13 sccm of Al(CH3)3, and a pressure of 250 mbar. The initial energy density of the beam at the surface was 40 mJ/sq cm, the pulse rate was 20 pps, and the growth time was 7 min. The films were analyzed by Auger electron spectroscopy for the aluminum concentration and by TEM for the surface morphology.
    Schlagwort(e): SOLID-STATE PHYSICS
    Materialart: NASA-TM-88937 , E-3379 , NAS 1.15:88937
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  • 10
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    Adhesion, friction, and deformation of ion-beam-deposited boron nitride films (1987)
    In:  CASI
    Details
    Publikationsdatum: 2019-06-28
    Beschreibung: The tribological properties and mechanical strength of boron nitride films were investigated. The BN films were predominantly amorphous and nonstoichiometric and contained small amounts of oxides and carbides. It was found that the yield pressure at full plasticity, the critical load to fracture, and the shear strength of interfacial adhesive bonds (considered as adhesion) depended on the type of metallic substrate on which the BN was deposited. The harder the substrate, the greater the critical load and the adhesion. The yield pressures of the BN film were 12 GPa for the 440C stainless steel substrate, 4.1 GPa for the 304 stainless steel substrate, and 3.3 GPa for the titanium substrate.
    Schlagwort(e): NONMETALLIC MATERIALS
    Materialart: NASA-TM-88902 , E-3326 , NAS 1.15:88902
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