ISSN:
1572-8951
Keywords:
Molecular beam epitaxy
;
dielectric fluoride films
;
epitaxial growth
;
thin films
;
heteroepitaxy
;
silicon
Source:
Springer Online Journal Archives 1860-2000
Topics:
Chemistry and Pharmacology
Notes:
Abstract In the course of the present work CaF2 epitaxialfilms were grown on Si(111) substrates by means ofMBE. The Si substrates were chemically cleaned priorto insertion into the system. The final volatile oxidewas desorbed in situ by heating to 850Ĉ. CaF2 was evaporated from aKnudsen-type cell by use of a graphite crucible, whilethe growth temperature was held at 650 Ĉ.RHEED (Reflection High Energy Electron Diffraction)has been used to monitor the film growth in situand to study the epitaxial quality. Also we have usedthe MeV He+ RBS channeling technique to look atdefects and to measure strain in the CaF2 layer.Usually good crystallographic properties are achievedunder optimum growth conditions, with values ofχmin 〈 5%. Electrical properties aremeasured by use of a special MIS structure.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1023/A:1008348506694
Permalink
