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  • 1
    Electronic Resource
    Electronic Resource
    Microstructure and optical absorption properties of Si nanocrystals fabricated with low-pressure chemical-vapor deposition (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4006-4011 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a simple technique for fabricating a layer of isolated Si quantum dots on SiO2 glass substrates. This technique uses conventional low-pressure chemical-vapor deposition for an extremely short deposition time in the early stage of poly-Si film growth. The layer after a deposition time of 60 s has isolated Si nanocrystals 5–20 nm in diameter and 2–10 nm in height. The measurements of optical absorption coefficient α show that the absorption edge for Si nanocrystals shifts to higher energies compared to that of bulk Si, indicating a widening of the energy gap caused by quantum size effects. The linear relationship (αhν)1/2 against hν suggests that the Si nanocrystal, whose diameter is as small as 10 nm, basically maintains the properties of an indirect band-gap semiconductor. Special attention must be paid to the Brownian migration of Si nanocrystals for fabricating Si quantum dots. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363359
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  • 2
    Electronic Resource
    Electronic Resource
    Arsenic precipitation from thin surface layers of low-temperature grown GaAs (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1441-1443 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Arsenic precipitation from a thin, 100-nm surface layer of GaAs grown at low temperature (LT) by molecular beam epitaxy is investigated. The precipitate depth distribution is examined for different rapid thermal annealing cycles. It is found that the precipitate distribution can tail a long distance into the underlying stoichiometric GaAs layer, depending on the peak annealing temperature. The distribution for an 800 °C anneal is virtually unaffected by a prior low temperature "soak'' at 600 °C, thus showing that the precipitation is insensitive to the initial point defect concentrations in this temperature range. The relevance of these results to the precipitation process and to the use of thin LT layers in device applications is discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117608
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  • 3
    Electronic Resource
    Electronic Resource
    Resonant tunneling bipolar transistors using InAlAs/InGaAs heterostructures (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1771-1775 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Resonant tunneling bipolar transistors (RBTs) using InAlAs/InGaAs heterostructures were fabricated. These devices are bipolar transistors which use a resonant tunneling barrier as a minority-carrier injector. The RBT exhibits a collector current peak as a function of the base-emitter voltage at room temperature. The peak-to-valley ratio of the collector current is 3.5, and the peak collector current density is 5.7×104 A/cm2. The common-emitter current gain reaches a value of 24. These InAlAs/InGaAs RBTs characteristics are much better than those of AlGaAs/GaAs RBTs. We measured the microwave characteristics of the InAlAs/InGaAs RBT at room temperature, and obtained a cutoff frequency of 12.4 GHz. An equivalent circuit analysis and device simulation yielded an estimated resonant tunneling barrier response time of 1.4 ps.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342929
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  • 4
    Electronic Resource
    Electronic Resource
    Coupling between one-dimensional states in a quantum point contact and an electron waveguide (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 3087-3089 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A study of electron-wave interference effects in a structure which is comprised of a split-gate point contact with a parallel reflector gate is reported. The structure constricts the injected electrons to a waveguide. The variation of point contact conductance with reflector voltage has novel oscillations directly related to the one-dimensional (1D) states in the waveguide. The oscillations are caused by the change in matching between a mode for the 1D waveguide state and an electron wave injected into the states. The oscillations are also found to be quenched with weak magnetic fields due to electron wave deflection. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112468
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  • 5
    Electronic Resource
    Electronic Resource
    Lateral patterning of arsenic precipitates in GaAs by a surface stress structure (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2194-2196 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lateral patterning of arsenic precipitates in GaAs is reported. The positions of near-surface precipitates in a GaAs layer grown by molecular beam epitaxy at low temperature are controlled by InGaAs stressors 45 nm in width covered by a SiO2 film. The stressors form a surface grating which governs the precipitate position by modulating the strain in the GaAs near the surface. Electron microscopy clearly reveals the formation of precipitates about 15 nm in diameter aligned with the stressors at a depth of ∼50 nm. It is suggested that this capability to control the position of nanometer-size metallic particles within a semiconductor could open up new possibilities for novel devices. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113944
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  • 6
    Electronic Resource
    Electronic Resource
    Electron transport properties through InAs self-assembled quantum dots in modulation doped structures (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2294-2296 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report electron transport properties through InAs self-assembled quantum dots in a modulation-doped structure with split gates. We observed drain current modulation with respect to gate voltage due to electron transport through the quantum level of InAs dots. The energy gaps estimated from the temperature dependence study of valley current and the voltage difference between the drain current peaks were consistent with each other and as large as 14 meV. The energy gaps can be explained by the charging energy of the InAs dots. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118840
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  • 7
    Electronic Resource
    Electronic Resource
    Patterned self-assembly of one-dimensional arsenic particle arrays in GaAs by controlled precipitation (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 478-480 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A process for the patterned self-assembly of nanometer-scale particles within a solid is described. The process uses crystal strain and composition to guide the formation of arsenic precipitates in GaAs-based epitaxial layers grown at low temperature by molecular beam epitaxy. The lateral particle position is controlled by the strain produced by a surface stress structure while the vertical position is controlled by the epitaxial layer composition. Arsenic particles ∼16-nm in diameter are fabricated in one-dimensional arrays with a 23-nm edge-to-edge particle spacing at a depth of 45 nm below stressors 200 nm in width, thereby demonstrating this technique. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116419
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  • 8
    Electronic Resource
    Electronic Resource
    Longitudinal optical phonon relaxation in a GaAs/AlGaAs triple barrier tunnel diode at strong perpendicular magnetic fields (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1596-1598 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Longitudinal optical (LO) phonon relaxation is investigated in a GaAs/AlGaAs triple barrier tunnel diode at strong perpendicular magnetic fields. We observe LO-phonon assisted tunneling to the ground state as well as to Landau level states. Maxima in the LO-phonon assisted tunnel peak are found each time the LO-phonon energy matches multiple of the Landau level spacing. Corresponding maxima as well as parity effects are found in the integral tunnel conductance. The results indicate enhancement of LO-phonon assisted inter Landau level transitions with increasing magnetic field. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117042
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  • 9
    Electronic Resource
    Electronic Resource
    Shallow p-type SiGeC layers synthesized by ion implantation of Ge, C, and B in Si (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1568-1570 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated the characteristics of p-type SiGeC layers for possible application to source/drain regions of sub-100 nm metal–oxide–semiconductor field-effect transistors. We synthesized the SiGeC layer by the high-dose ion implantation of Ge and C into Si substrate and subsequent annealing. We succeeded in fabricating shallow p+/n junctions by the incorporation of C, of which the peak concentration is more than 1%. B diffusion in this layer was significantly suppressed, and the depth profile of B was reproduced with a process simulation in which a diffusion coefficient much lower than the reported value was assumed. This should be attributed to decreased Si interstitials. We examined the sheet resistance and contact resistance of the SiGeC layer, and found that the increase in resistance is tolerable as compared with a SiGe layer. This is because the carrier deactivation by the incorporation of C was not serious, which was confirmed by the spreading resistance measurement. The junction leakage in the p+/n diode was reduced with the increase in the concentration of C. Hence, SiGeC is a promising material for use in shallow and low resistance p+/n junctions. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124757
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  • 10
    Electronic Resource
    Electronic Resource
    Mechanism of fatigue failure in ultralong life regime (2002)
    Oxford, UK : Blackwell Science Ltd
    Fatigue & fracture of engineering materials & structures 25 (2002), S. 0 
    Details
    ISSN: 1460-2695
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: The fatigue fracture surfaces of specimens of heat treated hard steels which failed in the regime of N = 105 to 5 × 108 cycles, were investigated by optical microscopy and SEM. Specimens having a longer fatigue life had a particular morphology beside the inclusion at the fracture origin. The particular morphology looked optically dark and in the previous paper it was named the Optically Dark Area, ODA. The roughness inside ODA is larger than outside ODA. The relative size of the ODA to the size of the inclusion at the fracture origin increases with increase in fatigue life. Thus, the ODA is considered to have a crucial role in the mechanism of ultra long life fatigue failure. Direct evidences of existence of hydrogen at the inclusion at fracture origin are presented. It is presumed that the ODA is made by the cyclic stress coupled with the hydrogen which is trapped by the inclusion at the fracture origin. To verify the influence of hydrogen, specimens containing different levels of hydrogen were prepared by different heat treatments. The results obtained by fatigue tests of these specimens suggest that the hydrogen trapped by inclusions is a crucial factor which causes the ultra long fatigue failure of high strength steels. Aspects of the double S–N curve are also discussed in terms of experimental methods, specimen size and statistical distribution of inclusions sizes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1460-2695.2002.00576.x
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