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Growth of GaAs from a free surface melt under controlled arsenic pressure in a partially confined configuration (1988)

Wu, Y. ; Gatos, H. C. ; Lagowski, J.

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Publication Date: 2019-06-28

Description: A partially confined configuration for the growth of GaAs from melt in space was developed, consisting of a triangular prism containing the seed crystal and source material in the form of a rod. It is suggested that the configuration overcomes two obstacles in the growth of GaAs in space: total confinement in a quartz crucible and lack of arsenic pressure control. Ground tests of the configuration show that it is capable of crystal growth in space and is useful for studying the growth of GaAs from a free-surface melt on earth. The resulting chemical composition, electrical property variations, and phenomenological models to account for the results are presented.

Keywords: MATERIALS PROCESSING

Type: IAF PAPER 88-362

Format: text

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