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  • 1
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    Amorphous-Carbon Films (1993)
    In:  Other Sources
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    Publication Date: 2019-07-12
    Description: Report describes structure, preparation, characterization, and applications of films of amorphous-carbon. Amorphous-carbon films potentially useful as masks in x-ray lithography, layers for passivation of high-speed microelectronic circuits, hard films to protect magnetic recording media and optical components from degradation by chemical etching or wear, and radiation detectors.
    Keywords: MATERIALS
    Type: LEW-15298 , NASA Tech Briefs (ISSN 0145-319X); 17; 7; P. 89
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  • 2
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    Synthesis, Properties, and Applications Of Boron Nitride (1993)
    In:  Other Sources
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    Publication Date: 2019-07-12
    Description: Report describes synthesis, properties, and applications of boron nitride. Especially in thin-film form. Boron nitride films useful as masks in x-ray lithography; as layers for passivation of high-speed microelectronic circuits; insulating films; hard, wear-resistant, protective films for optical components; lubricants; and radiation detectors. Present status of single-crystal growth of boron nitride indicates promising candidate for use in high-temperature semiconductor electronics.
    Keywords: MATERIALS
    Type: LEW-15299 , NASA Tech Briefs (ISSN 0145-319X); 17; 7; P. 88
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  • 3
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    Properties Of Plasma-Deposited Amorphous Hydrogenated Carbon (1992)
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    Publication Date: 2019-07-12
    Description: Report reviews experimental research on plasma-deposited films of hydrogenated amorphous carbon. Such films exhibit electrical resistivity, semi-transparency, mechanical hardness, and chemical inertness. Useful as gate dielectrics and passivating layers in semiconductor devices, insulators for metal/insulator/metal devices, and masks in nanometer lithography. Show promise as wear-resistant, hard solid lubricating coats for bearings and optical components.
    Keywords: MATERIALS
    Type: LEW-15095 , NASA Tech Briefs (ISSN 0145-319X); 17; 4; P. 59
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  • 4
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    Rapid Annealing Of Amorphous Hydrogenated Carbon (1989)
    In:  Other Sources
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    Publication Date: 2019-07-12
    Description: Report describes experiments to determine effects of rapid annealing on films of amorphous hydrogenated carbon. Study represents first efforts to provide information for applications of a-C:H films where rapid thermal processing required. Major finding, annealing causes abrupt increase in absorption and concomitant decrease in optical band gap. Most of change occurs during first 20 s, continues during longer annealing times. Extend of change increases with annealing temperature. Researchers hypothesize abrupt initial change caused by loss of hydrogen, while gradual subsequent change due to polymerization of remaining carbon into crystallites or sheets of graphite. Optical band gaps of unannealed specimens on silicon substrates lower than those of specimens on quartz substrates.
    Keywords: MATERIALS
    Type: LEW-14664 , NASA Tech Briefs (ISSN 0145-319X); 13; 7; P. 58
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  • 5
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    Amorphous Insulator Films With Controllable Properties (1987)
    In:  Other Sources
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    Publication Date: 2019-07-12
    Description: In experiments described in report, amorphous hydrogenated carbon films grown at room temperature by low-frequency plasma deposition, using methane or butane gas. Films have unique array of useful properties; (a) adhere to wide variety of materials; (b) contain only carbon and hydrogen; (c) smooth and free of pinholes; (d) resistant to attack by moisture and chemicals; and (e) have high electric-breakdown strength and electrical resistivity. Two of optical properties and hardness of this film controlled by deposition conditions. Amorphous a-C:H and BN films used for hermetic sealing and protection of optical, electronic, magnetic, or delicate mechanical systems, and for semiconductor field dielectrics.
    Keywords: MATERIALS
    Type: LEW-14370 , NASA Tech Briefs (ISSN 0145-319X); 11; 9; P. 64
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