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  • Lunar and Planetary Science and Exploration  (2)
  • Magnetism  (2)
  • 1
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    Central role of domain wall depinning for perpendicular magnetization switching driven by spin torque from the spin Hall effect (2014)
    American Physical Society (APS)
    Details
    Publication Date: 2014-01-29
    Description: Author(s): O. J. Lee, L. Q. Liu, C. F. Pai, Y. Li, H. W. Tseng, P. G. Gowtham, J. P. Park, D. C. Ralph, and R. A. Buhrman We study deterministic magnetic reversal of a perpendicularly magnetized Co layer in a Co/MgO/Ta nanosquare driven by spin Hall torque from an in-plane current flowing in an underlying Pt layer. The rate-limiting step of the switching process is domain wall (DW) depinning by spin Hall torque via a t... [Phys. Rev. B 89, 024418] Published Tue Jan 28, 2014
    Keywords: Magnetism
    Print ISSN: 1098-0121
    Electronic ISSN: 1095-3795
    Topics: Physics
    Published by American Physical Society (APS)
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    PAPER CURRENT
  • 2
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    Vertical spin Hall magnetoresistance in Ta_{1−x} Pt_{x} /YIG bilayers (2016)
    American Physical Society (APS)
    Details
    Publication Date: 2016-10-08
    Description: Author(s): J. H. Han, G. Y. Shi, X. J. Zhou, Q. H. Yang, Y. H. Rao, G. Li, H. W. Zhang, F. Pan, and C. Song The spin Hall effect and the magnetic proximity effect are two main sources of the magnetoresistance (MR) effects in heavy metal/ferromagnet bilayers, where they play isolated roles but are usually contaminated by each other. In T a 1 − x P t x / YIG ( = Y 3 F e 5 O 12 ) bilayers consisting of Ta and Pt nanograins, th… [Phys. Rev. B 94, 134406] Published Thu Oct 06, 2016
    Keywords: Magnetism
    Print ISSN: 1098-0121
    Electronic ISSN: 1095-3795
    Topics: Physics
    Published by American Physical Society (APS)
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    PAPER CURRENT
  • 3
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    A Library of Rad Hard Mixed-Voltage/Mixed-Signal Building Blocks for Integration of Avionics Systems for Deep Space (2001)
    In:  Other Sources
    Details
    Publication Date: 2019-07-17
    Description: To build the sensor intensive system-on-a-chip for the next generation spacecrafts for deep space, Center for Integration of Space Microsystems at JPL (CISM) takes advantage of the lower power rating and inherent radiation resistance of Silicon on Insulator technology (SOI). We are developing a suite of mixed-voltage and mixed-signal building blocks in Honeywell's SOI process that can enable the rapid integration of the next generation avionics systems with lower power rating, higher reliability, longer life, and enhanced radiation tolerance for spacecrafts such as the Europa Orbiter and Europa Lander. The mixed-voltage building blocks are predominantly for design of adaptive power management systems. Their design centers around an LDMOS structure that is being developed by Honeywell, Boeing Corp, and the University of Idaho. The mixed-signal building blocks are designed to meet the low power, extreme radiation requirement of deep space applications. These building blocks are predominantly used to interface analog sensors to the digital CPU of the next generation avionics system on a chip. Additional information is contained in the original extended abstract.
    Keywords: Lunar and Planetary Science and Exploration
    Type: Forum on Innovative Approaches to Outer Planetary Exploration 2001-2020; 57; LPI-Contrib-1084
    Format: text
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    NASA TECHNICAL REPORTS
  • 4
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    An Active Substrate Driver for Enabling Mixed-Voltage SOI Systems-On-A-Chip (2001)
    In:  Other Sources
    Details
    Publication Date: 2019-07-17
    Description: The current trend for space application systems is towards fully integrated systems-on-a-chip. To facilitate this drive, high-voltage transistors must reside on the same substrate as low-voltage transistors. These systems must also be radiation tolerant, particularly for space missions such as the Europa Lander and Titan Explorer. SOI CMOS technology offers high levels of radiation hardness. As a result, a high-voltage lateral MOSFET has been developed in a partially-depleted (PD) SOI technology. Utilizing high voltages causes a parasitic transistor to have non-negligible effects on a circuit. Several circuit architectures have been used to compensate for the radiation induced threshold voltage shift of the parasitic back-channel transistor. However, a new architecture for high-voltage systems must be employed to bias the substrate to voltage levels insuring all parasitic transistors remain off. An active substrate driver has been developed to accomplish task. Additional information is contained in the original extended abstract.
    Keywords: Lunar and Planetary Science and Exploration
    Type: Forum on Innovative Approaches to Outer Planetary Exploration 2001-2020; 43; LPI-Contrib-1084
    Format: text
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    NASA TECHNICAL REPORTS
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