Publication Date:
2024-04-11
Description:
As CMOS scaling is approaching the fundamental physical limits, a wide range of new nanoelectronic materials and devices have been proposed and explored to extend and/or replace the current electronic devices and circuits so as to maintain progress with respect to speed and integration density. The major limitations, including low carrier mobility, degraded subthreshold slope, and heat dissipation, have become more challenging to address as the size of silicon-based metal oxide semiconductor field effect transistors (MOSFETs) has decreased to nanometers, while device integration density has increased. This book aims to present technical approaches that address the need for new nanoelectronic materials and devices. The focus is on new concepts and knowledge in nanoscience and nanotechnology for applications in logic, memory, sensors, photonics, and renewable energy. This research on nanoelectronic materials and devices will be instructive in finding solutions to address the challenges of current electronics in switching speed, power consumption, and heat dissipation and will be of great interest to academic society and the industry.
Keywords:
TA1-2040
;
T1-995
;
quantum mechanical
;
n/a
;
neuromorphic computation
;
off-current (Ioff)
;
double-gate tunnel field-effect-transistor
;
topological insulator
;
back current blocking layer (BCBL)
;
CMOS power amplifier IC
;
information integration
;
distributed Bragg
;
spike-timing-dependent plasticity
;
electron affinity
;
enhancement-mode
;
current collapse
;
gallium nitride (GaN)
;
band-to-band tunneling
;
vertical field-effect transistor (VFET)
;
ionic liquid
;
luminescent centres
;
thermal coupling
;
vision localization
;
PC1D
;
UAV
;
ZnO/Si
;
dual-switching transistor
;
memristor
;
field-effect transistor
;
higher order synchronization
;
shallow trench isolation (STI)
;
memristive device
;
on-current (Ion)
;
low voltage
;
reflection transmision method
;
dielectric layer
;
source/drain (S/D)
;
high efficiency
;
nanostructure synthesis
;
InAlN/GaN heterostructure
;
supercapacitor
;
high-electron mobility transistor (HEMTs)
;
heterojunction
;
p-GaN
;
recessed channel array transistor (RCAT)
;
gate field effect
;
charge injection
;
saddle FinFET (S-FinFET)
;
L-shaped tunnel field-effect-transistor
;
conductivity
;
energy storage
;
hierarchical
;
PECVD
;
sample grating
;
MISHEMT
;
bistability
;
threshold voltage (VTH)
;
bandgap tuning
;
oscillatory neural networks
;
UV irradiation
;
Mott transition
;
third harmonic tuning
;
topological magnetoelectric effect
;
cross-gain modulation
;
2D material
;
solar cells
;
silicon on insulator (SOI)
;
Green’s function
;
optoelectronic devices
;
semiconductor optical amplifier
;
ZnO films
;
graphene
;
AlGaN/GaN
;
polarization effect
;
two-photon process
;
conductive atomic force microscopy (cAFM)
;
2DEG density
;
vanadium dioxide
;
interface traps
;
potential drop width (PDW)
;
pattern recognition
;
drain-induced barrier lowering (DIBL)
;
atomic layer deposition (ALD)
;
normally off power devices
;
gate-induced drain leakage (GIDL)
;
insulator–metal transition (IMT)
;
zinc oxide
;
synaptic device
;
subthreshold slope (SS)
;
landing
;
silicon
;
corner-effect
;
conditioned reflex
;
quantum dot
;
gallium nitride
;
bismuth ions
;
conduction band offset
;
variational form
;
thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues::TBX History of engineering and technology
Language:
English
Format:
image/jpeg
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