ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    facet.materialart.
    Unknown
    Surface and Interface Properties of PdCr/SiC Schottky Diode Gas Sensor Annealed at 425 C (1998)
    In:  Other Sources
    Details
    Publication Date: 2011-08-23
    Description: The surface and interface properties of Pd(0.9,)Cr(0.1)/SiC Schottky diode gas sensors both before and after annealing are investigated using Auger electron spectroscopy (AES), scanning electron microscopy (SEM), and energy dispersive spectroscopy (EDS). At room temperature the alloy reacted with SiC and formed Pd,Si only in a very narrow interfacial region. After annealing for 250 h ,It 425 C, the surface of the Schottky contact area his much less silicon and carbon contamination than that found on the surface of an annealed Pd/SiC structure. Palladium silicides (Pd(x)Si) formed at a broadened interface after annealing, but a significant layer of alloy film is still free of silicon and carbon. The chromium concentration with respect to palladium is quite uniform down to the deep interface region. A stable catalytic surface and a clean layer of Pd(0.9)Cr(0.1) film are likely responsible for significantly improved device sensitivity.
    Keywords: Instrumentation and Photography
    Type: Solid-State Electronics (ISSN 0038-1101); Volume 42; No. 12; 2209-2214
    Format: text
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    NASA TECHNICAL REPORTS
  • 2
    facet.materialart.
    Unknown
    SiC-Based Schottky Diode Gas Sensors (1997)
    In:  CASI
    Details
    Publication Date: 2019-07-27
    Description: Silicon carbide based Schottky diode gas sensors are being developed for high temperature applications such as emission measurements. Two different types of gas sensitive diodes will be discussed in this paper. By varying the structure of the diode, one can affect the diode stability as well as the diode sensitivity to various gases. It is concluded that the ability of SiC to operate as a high temperature semiconductor significantly enhances the versatility of the Schottky diode gas sensing structure and will potentially allow the fabrication of a SiC-based gas sensor arrays for versatile high temperature gas sensing applications.
    Keywords: Instrumentation and Photography
    Type: NASA-TM-113159 , NAS 1.15:113159 , E-10910
    Format: application/pdf
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    NASA TECHNICAL REPORTS
  • 3
    facet.materialart.
    Unknown
    Sixty Earth-Days Test of a Prototype Pt/HTCC Alumina Package in Simulated Venus Environment (2018)
    In:  CASI
    Details
    Publication Date: 2019-07-13
    Description: This paper presents experimental results of a prototype high temperature co-fired ceramic (HTCC) package with Au/Pt metallization in a three-phase harsh environment test that culminated with 60-day demonstration in simulated Venus surface environment of 465 degrees Centigrade with corrosive atmosphere at 90 bars pressure. The prototype package is based on a previously developed and reported HTCC package successfully tested with multiple analog and digital silicon carbide (SiC) high temperatures semiconductor integrated circuits (ICs) at NASA Glenn Research Center in 500 degrees Centigrade Earth air ambient for over ten thousand hours, and short-term tested at temperatures above 800 degrees Centigrade. The three-phase harsh environment test started with 48 hours in 465 degrees Centigrade Earth air, followed by 48 hours in 465 degrees Centigrade nitrogen at 90-bar pressure and 1400 hours in simulated Venus surface environment of 465 degrees Centigrade with corrosive atmosphere at 90 bars. Initial analytical results of the package materials and surfaces after exposure to the Venus environment are discussed to assess the stability of the packaging materials in the tested environments. The test in a simulated Venus environment was implemented in the NASA Glenn Extreme Environment Rig (GEER). The results of this study suggest that an effective encapsulation of areas of surface metallization and vicinities may help to improve electrical performance of a HTCC alumina packaging system in Venus environment.
    Keywords: Lunar and Planetary Science and Exploration; Electronics and Electrical Engineering
    Type: GRC-E-DAA-TN56196 , International Conference and Exhibition on High Temperature Electronics (iMAPS 2018 HiTEC); May 08, 2018 - May 10, 2018; Albuquerque, NM; United States
    Format: application/pdf
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    NASA TECHNICAL REPORTS
  • 4
    facet.materialart.
    Unknown
    Sixty Earth-Days Test of a Prototype Pt/HTCC Alumina Package in Simulated Venus Environment (2018)
    In:  CASI
    Details
    Publication Date: 2019-07-13
    Description: This paper presents experimental results of a prototype high temperature co-fired ceramic (HTCC) package with Au/Pt metallization in a three-phase harsh environment test that culminated with 60-day demonstration in simulated Venus surface environment of 465 degC with corrosive atmosphere at 90 bar pressure. The prototype package is based on previously developed and reported HTCC package successfully tested with multiple analog and digital silicon carbide (SiC) high temperatures semiconductor integrated circuits (ICs) at NASA Glenn Research Center in 500 degC Earth air ambient for over ten thousands hours, and short-term tested at temperatures above 800 degC. The three-phase harsh environment test started with 48 hours in 465 degC Earth air, followed by 48 hours in 465 degC nitrogen at 90 bar pressure and 1400 hours in simulated Venus surface environment of 465 degC with corrosive atmosphere at 90 bar. Initial analytical results of the package materials and surfaces after exposure to Venus environment are discussed to assess the stability of the packaging materials in the tested environments. The test in simulated Venus environment was implemented in the NASA Glenn Extreme Environment Rig (GEER). The results of this study suggest that an effective encapsulation of areas of surface metallization and vicinities may help to improve electrical performance of a HTCC alumina packaging system in Venus environment.
    Keywords: Lunar and Planetary Science and Exploration; Electronics and Electrical Engineering
    Type: GRC-E-DAA-TN56139 , iMAPS HiTEC 2018; May 08, 2018 - May 10, 2018; Albuquerque, NM; United States
    Format: application/pdf
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    NASA TECHNICAL REPORTS
  • 5
    facet.materialart.
    Unknown
    SiC-Based Gas Sensors (1997)
    In:  CASI
    Details
    Publication Date: 2019-07-13
    Description: Electronic grade Silicon Carbide (SiC) is a ceramic material which can operate as a semiconductor at temperatures above 600 C. Recently, SiC semiconductors have been used in Schottky diode gas sensor structures. These sensors have been shown to be functional at temperatures significantly above the normal operating range of Si-based devices. SiC sensor operation at these higher temperatures allows detection of gases such as hydrocarbons which are not detectable at lower temperatures. This paper discusses the development of SiC-based Schottky diode gas sensors for the detection of hydrogen, hydrocarbons, and nitrogen oxides (NO(x)). Sensor designs for these applications are discussed. High sensitivity is observed for the hydrogen and hydrocarbon sensors using Pd on SiC Schottky diodes while the NO(x) sensors are still under development. A prototype sensor package has been fabricated which allows high temperature operation in a room temperature ambient by minimizing heat loss to that ambient. It is concluded that SiC-based gas sensors have considerable potential in a variety of gas sensing applications.
    Keywords: Instrumentation and Photography
    Type: NASA-TM-113125 , NAS 1.15:113125 , E-10891 , Oct 06, 1996 - Oct 11, 1996; San Antonio, TX; United States
    Format: application/pdf
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    NASA TECHNICAL REPORTS
  • 6
    facet.materialart.
    Unknown
    Chemical Gas Sensors for Aeronautic and Space Applications (1997)
    In:  CASI
    Details
    Publication Date: 2019-07-13
    Description: Aeronautic and space applications require the development of chemical sensors with capabilities beyond those of commercially available sensors. Two areas of particular interest are safety monitoring and emission monitoring. In safety monitoring, detection of low concentrations of hydrogen at potentially low temperatures is important while for emission monitoring the detection of nitrogen oxides, hydrogen, hydrocarbons and oxygen is of interest. This paper discusses the needs of aeronautic and space applications and the point-contact sensor technology being developed to address these needs. The development of these sensors is based on progress in two types of technology: (1) Micromachining and microfabrication technology to fabricate miniaturized sensors. (2) The development of high temperature semiconductors, especially silicon carbide. The detection of each type of gas involves its own challenges in the fields of materials science and fabrication technology. The number of dual-use commercial applications of this microfabricated gas sensor technology make this general area of sensor development a field of significant interest.
    Keywords: Instrumentation and Photography
    Type: NASA-TM-107444 , NAS 1.15:107444 , E-10714 , Sensors Expo 1997; May 12, 1997 - May 15, 1997; Boston, MA; United States
    Format: application/pdf
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    NASA TECHNICAL REPORTS
  • 7
    facet.materialart.
    Unknown
    Development of High Temperature Gas Sensor Technology (1997)
    In:  CASI
    Details
    Publication Date: 2019-07-13
    Description: The measurement of engine emissions is important for their monitoring and control. However, the ability to measure these emissions in-situ is limited. We are developing a family of high temperature gas sensors which are intended to operate in harsh environments such as those in an engine. The development of these sensors is based on progress in two types of technology: (1) The development of SiC-based semiconductor technology; and (2) Improvements in micromachining and microfabrication technology. These technologies are being used to develop point-contact sensors to measure gases which are important in emission control especially hydrogen, hydrocarbons, nitrogen oxides, and oxygen. The purpose of this paper is to discuss the development of this point-contact sensor technology. The detection of each type of gas involves its own challenges in the fields of materials science and fabrication technology. Of particular importance is sensor sensitivity, selectivity, and stability in long-term, high temperature operation. An overview is presented of each sensor type with an evaluation of its stage of development. It is concluded that this technology has significant potential for use in engine applications but further development is necessary.
    Keywords: Instrumentation and Photography
    Type: NASA-TM-107442 , NAS 1.15:107442 , E-10710 , Turbo-Expo 1997; Jun 02, 1997 - Jun 05, 1997; Orlando, FL; United States
    Format: application/pdf
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    NASA TECHNICAL REPORTS
  • 8
    facet.materialart.
    Unknown
    Surface and Interface Study of PdCr/SiC Schottky Diode Gas Sensor Annealed at 425 C (1998)
    In:  CASI
    Details
    Publication Date: 2019-07-13
    Description: The surface and interface properties of Pd(sub 0.9)Cr(sub 0.1/SiC Schottky diode gas sensor both before and after annealing are investigated using Auger Electron Spectroscopy (AES), Scanning Electron Microscopy (SEM), and Energy Dispersive Spectroscopy (EDS). At room temperature the alloy reacted with SiC and formed Pd(sub x)Si only in a very narrow interfacial region. After annealing for 250 hours at 425 deg. C, the surface of the Schottky contact area has much less silicon and carbon contamination than that found on the surface of an annealed Pd/SiC structure. Pd(sub x)Si formed at a broadened interface after annealing, but a significant layer of alloy film is still free of silicon and carbon. The chromium concentration with respect to palladium is quite uniform down to the deep interface region. A stable catalytic surface and a clean layer of Pd(sub 0.9)Cr(sub 0.1) film are likely responsible for significantly improved device sensitivity.
    Keywords: Instrumentation and Photography
    Type: NASA/TM-1998-107429 , E-11155 , NAS 1.15:107429 , Dec 01, 1997 - Dec 05, 1997; Boston, MA; United States
    Format: application/pdf
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    NASA TECHNICAL REPORTS
  • 9
    facet.materialart.
    Unknown
    An overview of silicon carbide device technology (1992)
    In:  CASI
    Details
    Publication Date: 2019-07-13
    Description: Recent progress in the development of silicon carbide (SiC) as a semiconductor is briefly reviewed. This material shows great promise towards providing electronic devices that can operate under the high-temperature, high-radiation, and/or high-power conditions where current semiconductor technologies fail. High quality single crystal wafers have become available, and techniques for growing high quality epilayers have been refined to the point where experimental SiC devices and circuits can be developed. The prototype diodes and transistors that have been produced to date show encouraging characteristics, but by the same token they also exhibit some device-related problems that are not unlike those faced in the early days of silicon technology development. Although these problems will not prevent the implementation of some useful circuits, the performance and operating regime of SiC electronics will be limited until these device-related issues are solved.
    Keywords: SOLID-STATE PHYSICS
    Type: NASA-TM-105402 , E-6803 , NAS 1.15:105402 , Symposium on Space Nuclear Power Systems; Jan 12, 1992 - Jan 16, 1992; Albuquerque, NM; United States
    Format: application/pdf
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    NASA TECHNICAL REPORTS
  • 10
    facet.materialart.
    Unknown
    Surface and Interface Properties of PdCr/SiC Schottky Diode Gas Sensor Annealed at 425 C (1998)
    In:  CASI
    Details
    Publication Date: 2019-07-10
    Description: The surface and interface properties of Pd(0.9)Cr(0.1)/SiC Schottky diode gas sensors both before and after annealing are investigated using Auger Electron Spectroscopy (AES), Scanning Electron Microscopy (SEM), and Energy Dispersive Spectroscopy (EDS). At room temperature the alloy reacted with SiC and formed Pd(x)Si only in a very narrow interfacial region. After annealing for 250 hours at 425 C, the surface of the Schottky contact area has much less silicon and carbon contamination than that found on the surface of an annealed Pd/SiC structure. Palladium silicides (Pd(x)Si) formed at a broadened interface after annealing, but a significant layer of alloy film is still free of silicon and carbon. The chromium concentration with respect to palladium is quite uniform down to the deep interface region. A stable catalytic surface and a clean layer of Pd(0.9)Cr(0.1) film are likely responsible for significantly improved device sensitivity.
    Keywords: Instrumentation and Photography
    Format: application/pdf
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    NASA TECHNICAL REPORTS
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...