Publication Date:
2011-06-21
Description:
Author(s): J. D. Watson, S. Mondal, G. A. Csáthy, M. J. Manfra, E. H. Hwang, S. Das Sarma, L. N. Pfeiffer, and K. W. West We report on a systematic study of the density dependence of mobility in a low-density carbon-doped (100) GaAs two-dimensional hole system (2DHS). At T =50 mK, a mobility of 2.6 × 10 6 cm 2 /Vs at a density p =6.2×10 10 cm -2 was measured. This is the highest mobility reported for a 2DHS to date. Using a b... [Phys. Rev. B 83, 241305] Published Mon Jun 20, 2011
Keywords:
Semiconductors II: surfaces, interfaces, microstructures, and related topics
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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