ISSN:
1057-9257
Keywords:
photoreflectance
;
photoluminescence
;
InGaAs/GaAs quantum well
;
type I and II excitonic transition
;
Chemistry
;
Polymer and Materials Science
Source:
Wiley InterScience Backfile Collection 1832-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
InGaAs/GaAs MOCVD-grown quantum wells have been investigated. Photoluminescence (PL) measurements have shown heavy-hole-related excitonic transitions within the temperature range from 10 to 100 K for all samples. In room-temperature photoreflectance (PR), sharp heavy- and light-hole excitonic transitions in the quantum wells have been observed. The transition energies obtained have been compared with values derived from theoretical considerations using the envelope function model including lattice-mismatch-related stress. The heavy- and light-hole transitions have been identified as excitonic transitions of types I and II respectively. © 1997 John Wiley & Sons, Ltd.
Additional Material:
3 Ill.
Type of Medium:
Electronic Resource
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