Publication Date:
2011-08-19
Description:
The corrosion of SiC by thin films of Na2CO3 and Na2SO4 at 1000 C is characterized by a severe pitting attack of the SiC substrate. A range of different Si and SiC substrates were examined to isolate the factors critical to pitting. Two types of pitting attack are identified: attack at structural discontinuities and a crater-like attack. The crater-like pits are correlated with bubble formation during oxidation of the SiC. It appears that bubbles create unprotected regions, which are susceptible to enhanced attack and, hence, pit formation.
Keywords:
INORGANIC AND PHYSICAL CHEMISTRY
Type:
Electrochemical Society, Journal (ISSN 0013-4651); 133; 2615-262
Format:
text
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